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相关论文: Perfect valley polarization in MoS2

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By using the first-principles calculations and model analyses, we found that the combination of defected tungsten disulfide monolayer and sparse manganese adsorption may give a KK` valley spin splitting up to 210 meV. This system also has a…

介观与纳米尺度物理 · 物理学 2020-01-22 Jie Li , Lei Gu , Ruqian Wu

MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…

We theoretically study a single-electron spin-valley qubit in an electrostatically defined quantum dot in a transition metal dichalcogenide monolayer, focusing on the example of MoS$_2$. Coupling of the qubit basis states for coherent…

介观与纳米尺度物理 · 物理学 2018-04-13 G. Széchenyi , L. Chirolli , A. Pályi

Monolayer transition metal dichalcogenides (TMDs) offer a novel two-dimensional platform for semiconductor devices. One such application, whereby the added low dimensional crystal physics (i.e. optical spin selection rules) may prove TMDs a…

介观与纳米尺度物理 · 物理学 2020-02-05 Matthew Brooks , Guido Burkard

In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields,…

We study the emergence of Majorana zero modes (MZMs) at the ends of a finite double zigzag honeycomb nanoribbon (zHNR). We show that a double zHNR geometry can host spin-polarized MZMs at its ends. We considered a minimal model composed by…

介观与纳米尺度物理 · 物理学 2021-08-18 R. C. Bento Ribeiro , J. H. Correa , L. S. Ricco , A. C. Seridonio , M. S. Figueira

The band structure of a monolayer MoS$_2$ comprises of spin-split subbands, owing to the mutual presence of broken inversion symmetry and strong spin-orbit coupling. In the conduction band, spin-valley coupled subbands cross each other at…

介观与纳米尺度物理 · 物理学 2022-11-09 K. Sonowal , D. V. Boev , A. V. Kalameitsev , V. M. Kovalev , I. G. Savenko

The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement…

介观与纳米尺度物理 · 物理学 2019-12-18 J. Pawłowski

Valley polarization and altermagnetism are two emerging fundamental phenomena in condensed matter physics, offering unprecedented opportunites for information encoding and processing in novel energy-efficient devices. By coupling valley and…

材料科学 · 物理学 2025-08-12 Wen-Xin Jiang , Zhen-Hao Gong , Yuantao Chen , Zhigang Gui , Li Huang

The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin…

Two-dimensional Molybdenum Disulfide (MoS2) has shown promising prospects for the next generation electronics and optoelectronics devices. The monolayer MoS2 can be patterned into quasi-one-dimensional anisotropic MoS2 nanoribbons (MNRs),…

材料科学 · 物理学 2016-09-27 Jiang-Bin Wu , Huan Zhao , Yuanrui Li , Douglas Ohlberg , Wei Shi , Wei Wu , Han Wang , Ping-Heng Tan

Abstract The valley degree of freedom in two-dimensional materials provides an opportunity to extend the functionalities of valleytronics devices. Very short valley lifetimes demand the ultrafast control of valley pseudospin. Here, we…

We report on scattering induced valley polarization enhancement in monolayer molybdenum disulfide. With thermally activated and charge doping introduced scattering, our sample exhibits seven? and twelve-folds of improvements respectively.…

光学 · 物理学 2021-10-13 Yueh-Chun Wu , Takashi Taniguchi , Kenji Watanabe , Jun Yan

While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…

The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical…

Spin splitting bands that arises in conduction band minimum (CBM) of WS2 monolayer (ML) play an important role in the new spin-orbit phenomena such as spin-valley coupled electronics. However, application of strain strongly modifies…

强关联电子 · 物理学 2016-10-04 Moh. Adhib Ulil Absor , Hiroki Kotaka , Fumiyuki Ishii , Mineo Saito

Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess…

Piezoelectricity offers precise and robust conversion between electricity and mechanical force. Here we report the first experimental evidence of piezoelectricity in a single layer of molybdenum disulfide (MoS2) crystal as a result of…

材料科学 · 物理学 2014-09-01 Hanyu Zhu , Yuan Wang , Jun Xiao , Ming Liu , Shaomin Xiong , Zi Jing Wong , Ziliang Ye , Xiaobo Yin , Xiang Zhang

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides…

材料科学 · 物理学 2018-01-17 Lei Xu , Ming Yang , Lei Shen , Jun Zhou , Tao Zhu , Yuan Ping Feng

The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has…