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We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the…

介观与纳米尺度物理 · 物理学 2009-11-13 J. A. Seamons , C. P. Morath , J. L. Reno , M. P. Lilly

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two…

介观与纳米尺度物理 · 物理学 2016-03-23 B. Zheng , A. F. Croxall , J. Waldie , K. Das Gupta , F. Sfigakis , I. Farrer , H. E. Beere , D. A. Ritchie

We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional…

介观与纳米尺度物理 · 物理学 2009-11-11 J. A. Seamons , D. R. Tibbetts , J. L. Reno , M. P. Lilly

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a…

介观与纳米尺度物理 · 物理学 2015-01-09 A. Gamucci , D. Spirito , M. Carrega , B. Karmakar , A. Lombardo , M. Bruna , A. C. Ferrari , L. N. Pfeiffer , K. W. West , Marco Polini , V. Pellegrini

We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron…

介观与纳米尺度物理 · 物理学 2008-07-02 J. A. Keogh , K. Das Gupta , H. E. Beere , D. A. Ritchie , M. Pepper

We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…

介观与纳米尺度物理 · 物理学 2008-09-16 E. H. Hwang , S. Das Sarma

Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An…

Excitons are pairs of electrons and holes bound together by the Coulomb interaction. At low temperatures, excitons can form a Bose-Einstein condensate (BEC), enabling macroscopic phase coherence and superfluidity. An electronic double layer…

介观与纳米尺度物理 · 物理学 2019-03-27 Xiaomeng Liu , Kenji Watanabe , Takashi Taniguchi , Bertrand I. Halperin , Philip Kim

We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the…

介观与纳米尺度物理 · 物理学 2009-11-10 E. Tutuc , M. Shayegan , D. A. Huse

Several recent experiments have reported an anomalous temperature dependence of the Coulomb drag effect in electron-hole bilayers. Motivated by these puzzling data, we study theoretically a low-density electron-hole bilayer, where electrons…

介观与纳米尺度物理 · 物理学 2016-06-08 Dmitry K. Efimkin , Victor Galitski

We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…

材料科学 · 物理学 2009-11-13 M. Prunnila , S. J. Laakso , J. M. Kivioja , J. Ahopelto

We study the influence of quantizing perpendicular magnetic fields on the ground state of a bilayer with electron and hole fluids separated by an opaque tunnel barrier. In the absence of a field, the ground state at low carrier densities is…

介观与纳米尺度物理 · 物理学 2024-04-09 Bo Zou , Yongxin Zeng , A. H. MacDonald , Artem Strashko

Tunneling spectroscopy reveals evidence for interlayer electron-hole correlations in quantum Hall bilayer two-dimensional electron systems at layer separations near, but above, the transition to the incompressible exciton condensate at…

介观与纳米尺度物理 · 物理学 2019-08-14 J. P. Eisenstein , L. N. Pfeiffer , K. W. West

We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of…

介观与纳米尺度物理 · 物理学 2021-06-16 Joonho Jang , Heun Mo Yoo , Loren N. Pfeiffer , Kenneth W. West , K. W. Baldwin , Raymond C. Ashoori

Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the…

We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle…

强关联电子 · 物理学 2019-03-12 Xingjun Wu , Wenkai Lou , Kai Chang , Gerard Sullivan , Rui-Rui Du

We report magneto-transport studies of InAs/GaSb bilayer quantum wells in a regime where the interlayer tunneling between the electron and hole gases is suppressed. When the chemical potential is tuned close to the charge neutrality point,…

介观与纳米尺度物理 · 物理学 2019-05-15 Di Xiao , Lun-Hui Hu , Chao-Xing Liu , Nitin Samarth

We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole…

介观与纳米尺度物理 · 物理学 2009-10-27 A. F. Croxall , K. Das Gupta , C. A. Nicoll , M. Thangaraj , H. E. Beere , I. Farrer , D. A. Ritchie , M. Pepper

We present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate…

介观与纳米尺度物理 · 物理学 2026-03-18 Zeyu Hao , A. M. Zimmerman , Kenji Watanabe , Takashi Taniguchi , Philip Kim

We consider the pairing of electrons and holes due to their Coulomb attraction in two parallel, independently gated graphene layers, separated by a barrier. At weak coupling, there exist the BCS-like pair-condensed state. Despite the fact…

强关联电子 · 物理学 2009-11-13 Yu. E. Lozovik , A. A. Sokolik
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