相关论文: Spin-orbit interaction in InAs/GaSb heterostructur…

Spin-orbit interactions (SOIs) of light are manifestations of coupling between components of light's angular momentum. They are at play in most basic optical processes, offering opportunities both to understand their fundamental origin and…

The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of…

We propose the mesoscopic device based on the Rashba spin orbit interaction (SOI) that contains a gated ballistic Aharonov-Bohm (AB) ring with incoming lead and two asymmetrically situated outgoing leads. The variations of the Rashba…

Rashba and linear Dresselhaus interactions are believed to yield dominant contribution to the spin splitting of two-dimensional electrons in the quantum wells based on A$_3$B$_5$ compounds. We show that the interfacial spin-orbit…

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer…

The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation…

Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of…

We consider electronic transport through semiconducting nanowires (W) with spin-orbit interaction (SOI), in a hybrid N-W-N setup where the wire is contacted by normal-metal leads (N). We investigate the conductance behavior of the system as…

We study the effects of spin-orbit interaction (SOI) on the current-induced motion of a magnetic (Bloch) domain wall in ultrathin ferromagnetic nanowires. The conspiracy of spin relaxation and SOI is shown to generate a novel strong…

We use $\vec{k}\cdot\vec{p}$ theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and…

In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…

We study the spin-orbit interaction effects in a one-dimensional electron system that result from the image charges in a nearby metallic gate. The nontrivial property of the image-potential-induced spin-orbit interaction (iSOI) is that it…

We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane…

Spin-orbit interaction (SOI) has been a key tool to steer and manipulate spin-dependent transport properties in two-dimensional electron gases. Here we demonstrate how spin currents can be created and efficiently read out in nano- or…

Spin relaxation in a quantum Hall ferromagnet, where filling is $\nu=1, 1/3, 1/5,...$, can be considered in terms of spin wave annihilation/creation processes. Hyperfine coupling with the nuclei of the GaAs matrix provides spin…

By means the envelope function approximation, 8-band Kane model and a finite-difference scheme with the coordinate space discretization, we numerically performed calculations of the spin-orbit coupling parameters for 2D electron gas…

Time resolved measurements of magnetization in n-GaAs have revealed a rich array of spin decoherence processes, and have shown that fairly long lifetimes (\sim 100 ns) can be achieved under certain circumstances. In time-resolved Faraday…

Spin-orbit interaction (SOI) in low-dimensional systems, namely Rashba systems and the edge states of topological materials, is extensively studied in this decade as a promising source to realize various fascinating spintronic phenomena,…

We study the spin dynamics in the presence of impurity and electron-electron (e-e) scattering in a III-V semiconductor quantum well with arbitrary spin-orbit coupling (SOC) strength and symmetry at finite temperature. We derive the coupled…

Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach towards growing ternary quantum wells that enables asymmetric…