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相关论文: Applications and non-idealities of submicron Al-Al…

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We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques…

介观与纳米尺度物理 · 物理学 2012-09-18 M. R. Nevala , S. Chaudhuri , J. Halkosaari , J. T. Karvonen , I. J. Maasilta

We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…

超导电性 · 物理学 2013-09-27 S. Chaudhuri , M. R. Nevala , I. J. Maasilta

The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest…

We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…

超导电性 · 物理学 2014-10-15 S. Chaudhuri , I. J. Maasilta

We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of…

介观与纳米尺度物理 · 物理学 2012-04-12 V. Lacquaniti , M. Belogolovskii , C. Cassiago , N. De Leo , M. Fretto , A. Sosso

We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…

We report a Nb/Al-AlN /Nb superconducting tunnel junction process in which the AlN barrier is formed by plasma nitridation using a compact microwave electron-cyclotron-resonance (ECR) nitrogen plasma source integrated into a standard…

Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on…

Sandwich-type MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated using as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibited substantial supercurrent and a well-defined superconducting gap…

超导电性 · 物理学 2007-05-23 K. Ueda , S. Saito , K. Semba , T. Makimoto , M. Naito

Tunnel junctions are one of the key elements of chip-scale microsystems serving various technologies from classical microelectronics to quantum information. Aluminium and its oxide (AlOx) have dominated cryogenic tunnel junction technology…

Superconducting tunnel junctions are being developed for application as photon detectors in astronomy. We present the latest results on the development of very high quality, very low critical temperature junctions, fabricated out of pure Al…

超导电性 · 物理学 2009-11-10 G. Brammertz , P. Verhoeve , D. Martin , A. Peacock , R. Venn

We demonstrate that at the usual 1E-7 torr range of base pressures in the sputtering chamber, X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface in both Nb/Al-AlOx/Pb tunnel junctions and Nb/Al…

材料科学 · 物理学 2007-05-23 X. Batlle , B. J. Hattink , A. Labarta , B. J. Jonsson-Akerman , R. Escudero , I. K. Schuller

We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the…

介观与纳米尺度物理 · 物理学 2015-05-28 I. M. Pop , T. Fournier , T. Crozes , F. Lecocq , I. Matei , B. Pannetier , O. Buisson , W. Guichard

In this paper we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by…

介观与纳米尺度物理 · 物理学 2013-09-30 M. P. Westig , S. Selig , K. Jacobs , T. M. Klapwijk , C. E. Honingh

We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of…

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures…

材料科学 · 物理学 2015-01-05 E. Cimpoiasu , S. K. Tolpygo , X. Liu , N. Simonian , J. E. Lukens , R. F. Klie , Y. Zhu , K. K. Likharev

Niobium offers the benefit of increased operating temperatures and frequencies for Josephson junctions, which are the core component of superconducting devices. However existing niobium processes are limited by more complicated fabrication…

量子物理 · 物理学 2024-02-23 Alexander Anferov , Kan-Heng Lee , Fang Zhao , Jonathan Simon , David I. Schuster

High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical…

Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and…

介观与纳米尺度物理 · 物理学 2009-11-07 R. Dolata , H. Scherer , A. B. Zorin , J. Niemeyer

We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of…

介观与纳米尺度物理 · 物理学 2009-11-11 P. J. Koppinen , L. M. Väistö , I. J. Maasilta
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