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The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects…

We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott…

The paradigmatic Mott insulator arises in strongly correlated systems, where strong local repulsion localizes interacting particles in underlying egg-holder-like potential. The corresponding Mott transition reflects delocalization of the…

超导电性 · 物理学 2020-05-28 Andreas Glatz , Valerii Vinokur

We study the differential resistivity transition of two-dimensional superconducting arrays induced by an external driving current, in the presence of thermal fluctuations and a magnetic field corresponding to $f$ flux quantum per plaquette.…

超导电性 · 物理学 2018-09-26 Enzo Granato

We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…

强关联电子 · 物理学 2021-02-19 Gia-Wei Chern

Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada , Fakher F. Assaad , Hirokazu Tsunetsugu , Yukitoshi Motome

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott-insulator to metal critical endpoint is investigated in detail as a function of pressure and…

强关联电子 · 物理学 2009-11-10 P. Limelette , A. Georges , D. Jerome , P. Wzietek , P. Metcalf , J. M. Honig

Changing the interactions between particles in an ensemble-by varying the temperature or pressure, for example-can lead to phase transitions whose critical behaviour depends on the collective nature of the many-body system. Despite the…

强关联电子 · 物理学 2009-11-11 F. Kagawa , K. Miyagawa , K. Kanoda

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

Using Mott insulators as a prototypical example, we demonstrate a dynamics-based characterization of quantum phases of matter through a general N-body renormalization group framework. The essential "Mott-ness" turns out to be characterized…

强关联电子 · 物理学 2025-10-17 Matheus de Sousa , Zhiyu Fan , Wei Ku

We investigate the critical behaviors of correlation length and critical exponents for strongly interacting bosons in a two-dimensional optical lattice via quantum Monte Carlo simulations. By comparing the full numerical results to those…

量子气体 · 物理学 2017-05-24 Hao Lee , Shiang Fang , Daw-Wei Wang

We explain in a consistent manner the set of seemingly conflicting experiments on the finite temperature Mott critical point, and demonstrate that the Mott transition is in the Ising universality class. We show that, even though the…

The Mott transition, a metal-insulator transition due to strong electronic interaction, is observed in many materials without an accompanying change of system symmetry. An important open question in Mott's proposal is the role of long-range…

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

强关联电子 · 物理学 2021-01-04 Byoung Hee Moon , Gang Hee Han , Miloš M. Radonjić , Hyunjin Ji , Vladimir Dobrosavljević

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

We demonstrate that the Mott transition exhibits universal scaling as a consequence of the breaking of a $\mathbb{Z}_2$ symmetry in momentum space. A direct consequence of this discrete symmetry breaking is the charge or Mott gap itself.…

强关联电子 · 物理学 2025-11-25 Jinchao Zhao , Peizhi Mai , Gaurav Tenkila , Philip W. Phillips

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…

强关联电子 · 物理学 2007-05-23 A. Liebsch
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