相关论文: Magnetoresistance generated from charge-spin conve…
We theoretically investigate a nonlinear spin Hall effect in $\mathcal{PT}$-symmetric antiferromagnetic metals, which serve as an efficient spin current generator. We elucidate that an emergent spin-dependent Berry curvature dipole is a…
Altermagnets have recently emerged as a new class of magnetic materials sharing properties of both antiferromagnets and ferromagnets. Despite very small net magnetization, they show phenomena usually associated with ferromagnetism, such as…
Electrical readout of 180$^\circ$ switching in strictly compensated collinear antiferromagnets remains a major challenge in antiferromagnetic spintronics. Electrical writing of perpendicularly magnetized ferromagnets by out-of-plane orbital…
The non-monotonic temperature dependence and sign reversal of chirality-related anomalous Hall effect in highly conductive metals are studied. Through the analysis of scattering rate, we find that the non-monotonicity and sign reversal have…
The anomalous Hall effect describes the generation of a transverse voltage by a longitudinal current even in the absence of an external magnetic field. While typically observed in ferromagnets, it has also been predicted to arise in…
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here…
Non-collinear antiferromagnets can have additional spin Hall effects due to the net chirality of their magnetic spin structure, which provides for more complex spin-transport phenomena compared to ordinary non-magnetic materials. Here we…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…
Non-monotonic dependence of anomalous Hall resistivity on temperature and magnetization, including a sign change, was observed in Fe/Gd bilayers. To understand the intriguing observations, we fabricated the Fe/Gd bilayers and single layers…
In this work, we present an experimental study of spin mediated enhanced negative magnetoresistance in Ni80Fe20 (50 nm)/p-Si (350 nm) bilayer. The resistance measurement shows a reduction of ~2.5% for the bilayer specimen as compared to…
We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…
The anomalous Hall effect has been indispensable in our understanding of numerous magnetic phenomena. This concerns both ferromagnetic materials, as well as diverse classes of antiferromagnets, where in addition to the anomalous and crystal…
We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin-mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the…
We study an asymmetric in field magnetoresistance that is frequently observed in magnetic films and, in particular, the odd longitudinal voltage peaks that appear during magnetization reversal in ferromagnetic films, with out-of-plane…
The Hall resistivity and magnetization have been investigated in the ferromagnetic state of the bilayered manganite La(2-2x)Sr(1+2x)Mn2O7 (x=0.36). The Hall resistivity shows an increase in both the ordinary and anomalous Hall coefficients…
Difference in density of states for the spin's majority and minority bands in a ferromagnet changes the electrostatic potential along the domains, introducing the discontinuities of the potential at domain boundaries. The value of…
The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to…
Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…
A comprehensive study of magnetoresistance and Hall effect has been performed for the set of the single crystals of non-magnetic metal LuB12 with the Jahn-Teller instability of the boron cage and dynamic charge stripes forming along <110>…
We investigate the possible origin of anomalous Hall effect in the CMR (colossal magnetoresistance) materials - the doped rare earth manganites - observed recently by Matl et al. It is demonstrated that the spin-orbit interaction in the…