中文
相关论文

相关论文: Compensated ferrimagnetic tetragonal Heusler thin …

200 篇论文

Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of…

In this article, we review the recent progress in growth, structural characterization, magnetic properties and related spintronic devices of tetragonal MnxGa and MnxAl thin films with perpendicular magnetic anisotropy. In the first part of…

材料科学 · 物理学 2013-12-04 Lijun Zhu , Shuaihua Nie , Jianhua Zhao

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…

Spin excitations of magnetic thin films are the founding element for novel transport concepts in spintronics, magnonics, and magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, their behaviour…

The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e.…

Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…

Bending effect on the magnetic anisotropy in 20 nm Co$_{2}$FeAl Heusler thin film grown on Kapton\textregistered{} has been studied by ferromagnetic resonance and glued on curved sample carrier with various radii. The results reported in…

材料科学 · 物理学 2015-06-22 M. Gueye , B. M. Wague , F. Zighem , M. Belmeguenai , M. S. Gabor , T. Petrisor , C. Tiusan , S. Mercon , D. Faurie

Strain-mediated magnetoelectric (ME) heterostructures enable electric-field control of magnetism and are promising for ultra-low-power spintronic logic. Yet achieving spatially selective, low-voltage control in thin films and quantifying ME…

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…

材料科学 · 物理学 2018-02-20 V. Baltz , A. Manchon , M. Tsoi , T. Moriyama , T. Ono , Y. Tserkovnyak

We conduct an exploration of the energy landscape of two coupled ferromagnetic layers with perpendicular-to-plane uniaxial anisotropy using finite-element micromagnetic simulations. These multilayers can be used to produce noncollinearity…

介观与纳米尺度物理 · 物理学 2024-09-04 George Lertzman-Lepofsky , Afan Terko , Sabri Koraltan , Dieter Suess , Erol Girt , Claas Abert

A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…

Controllable magnetization in atomically thin two-dimensional magnets is highly desirable for developing spintronics. For FeSe monolayer, its magnetic ground state is not yet fully understood, and the potential in constructing high-speed…

材料科学 · 物理学 2024-11-08 Yueqiao Qu , Yu Liao , Zhixiang Wang , Liang Liu , Gang Yao

Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…

Magnetic shape-memory (MSM) Heuslers show a strong coupling between magnetic and structural characteristics, evidencing a correlation between magnetic, thermal, and mechanical properties through a magnetostructural martensitic…

Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp…

Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the…

The study of the magnetic order has recently been invigorated by the discovery of exotic collinear antiferromagnets with time-reversal symmetry breaking. Examples include altermagnetism and compensated ferrimagnets, which show spin…

Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe)…

材料科学 · 物理学 2009-12-14 J-M. Beaujour , D. Ravelosona , I. Tudosa , E. Fullerton , A. D. Kent

Anti-ferromagnetic materials have the possibility to offer ultra fast, high data density spintronic devices. A significant challenge is the reliable detection of the state of the antiferromagnet, which can be achieved using exchange bias.…

材料科学 · 物理学 2021-03-17 Sarah Jenkins , Roy. W. Chantrell , Richard. F. L. Evans

We report a systematic investigation on the magnetization relaxation properties of iron-based half-metallic Heusler alloy Fe$_{2}$Cr$_{1-x}$Co_${x}$Si (FCCS) thin films using broadband angular-resolved ferromagnetic resonance. Band…