相关论文: Compensated ferrimagnetic tetragonal Heusler thin …
Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to…
The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and…
We investigate the effect of Mn substitution in Fe$_2$Ti$_{1-x}$Mn$_x$Sn on electronic structure and magnetic and electrical transport properties. The spin-polarized density of states calculations using density-functional theory (DFT)…
Perpendicular magnetic anisotropy (PMA) is a necessary condition for many spintronic applications like spin-orbit torques switching, logic and memory devices. An important class of magnetic insulators with low Gilbert damping at room…
High TC fully compensated ferrimagnets are potential candidates for spin transfer torque based spintronic devices. We report the structural and magnetic properties of high TC fully compensated ferrimagnets Mn2V0.5Co0.5Z where Z is Ga, Al,…
Spintronic nano-oscillators with reduced non-linearity could offer key benefits for realizing neuromorphic applications such as spike-based neurons and frequency multiplexing in neural networks. Here, we experimentally demonstrate the…
We have a choice of methods for examining domains at the surface of a ferromagnet that depend on probing the stray field distribution, but these methods do not work in antiferromagnets or compensated ferrimagnets, which produce no stray…
Spintronics is a rapidly evolving technology that utilizes the spin of electrons along with their charge to enable high speed, low power and non volatile electronic devices. The development of novel materials with tailored magnetic and…
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts,…
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet…
Interlayer exchange in synthetic antiferromagnets incorporating thin paramagnetic spacers can be controlled thermally. The spacer provides an additional ferromagnetic contribution that renormalizes the otherwise temperature-independent…
The analytical theory for a ferromagnetic antiferromagnetic bilayer with a compensated interface has been developed using an explicit expression for the interfacial interaction energy density. A stability of a solution describing domain…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use…
Laser-induced magnetization precessional dynamics was investigated in epitaxial films of Mn$_3$Ge, which is a tetragonal Heusler-like nearly compensated ferrimagnet. The ferromagnetic resonance (FMR) mode was observed, the precession…
The emergence of multiferroic materials, which possess both ferromagnetic (FM) and ferroelectric (FE) properties, drive advancements in magnetoelectric applications and the next generation of spintronics. Based on first-principles…
The fast spin dynamics provide many opportunities for the future communication and memory technologies. One of the most promising examples is the domain wall (DW) racetrack memory. To achieve fast device performances, the high-speed motion…
Half-metallic antiferromagnets are the ideal materials for spintronic applications since their zero magnetization leads to lower stray fields and thus tiny energy losses. Starting from the Mn$_2$VAl and Mn$_2$VSi alloys we substitute Co or…