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Hexagonal boron nitride (h-BN) is a natural hyperbolic material, for which the dielectric constants are the same in the basal plane (epsilon^t = epsilon^x = epsilon^y) but have opposite signs (epsilon^t*epsilon^z < 0) from that in the…

Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene and hexagonal boron nitride (h-BN) can be grown by chemical vapour deposition (CVD). However, the high temperatures and fast timescales at which the…

The dry release transfer of two-dimensional (2D) materials such as graphene, h-BN, and TMDs is a versatile method for fabricating high-quality van der Waals heterostructures. Up until now, polydimethylpolysiloxane (PDMS) sheets have been…

Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the…

The combination of two-dimensional (2D) materials into heterostructures enabled the formation of atomically thin devices with designed properties. To achieve a high density, bottom-up integration, the growth of these 2D heterostructures via…

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…

介观与纳米尺度物理 · 物理学 2020-06-19 J. Sonntag , J. Li , A. Plaud , A. Loiseau , J. Barjon , J. H. Edgar , C. Stampfer

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we…

介观与纳米尺度物理 · 物理学 2015-03-31 W. Gannett , W. Regan , K. Watanabe , T. Taniguchi , M. F. Crommie , A. Zettl

We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This…

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed…

介观与纳米尺度物理 · 物理学 2020-08-24 Sergio Pezzini , Vaidotas Mišeikis , Simona Pace , Francesco Rossella , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti

Chemical vapor deposition (CVD) has been widely adopted as the most scalable method to obtain single layer graphene. Incorporating CVD graphene in planar devices can be performed via well established wet transfer methods or thermal adhesive…

Graphene is an emerging class of two-dimensional (2D) material with unique electrical properties and a wide range of potential practical applications. In addition, graphene hybrid structures combined with other 2D materials, metal…

Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as…

Chemical vapour deposition (CVD) is a promising method for producing large-scale graphene (Gr). Nevertheless, microscopic inhomogeneity of Gr grown on traditional metal substrates such as copper or nickel results in a spatial variation of…

In this work we demonstrate the synthesis of millimetre-sized single-crystals of graphene, achievable in a commercially-available cold-wall CVD reactor, and several different approaches to transfer it from the growth substrate to a target…

材料科学 · 物理学 2017-11-15 Vaidotas Miseikis , Shaohua Xiang , Stefano Roddaro , Stefan Heun , Camilla Coletti

Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching…

Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its…

应用物理 · 物理学 2019-11-12 Jerome A. Cuenca , Soumen Mandal , Malcolm Snowball , Adrian Porch , Oliver A. Williams

Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. graphene, MoS2). Large-area h-BN can be readily grown on…

We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer…

Chemical vapor deposition (CVD) on Cu foil is one of the most promising methods to produce graphene samples despite of introducing numerous grain boundaries into the perfect graphene lattice. A rich variety of GB structures can be realized…

介观与纳米尺度物理 · 物理学 2013-10-28 Péter Vancsó , Géza I. Márk , Philippe Lambin , Alexandre Mayer , Chanyong Hwang , László P. Biró

The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and…