相关论文: Performance of Topological Insulator Interconnects

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good…

The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract…

In this review, we present a summary of some recent experiments on topological insulators (TIs) and superconducting nanowires and films. Electron-electron interaction (EEI), weak anti-localization (WAL) and anisotropic magneto-resistance…

In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the…

We predict that unpolarized charge current injected into a ballistic thin film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a {\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface. Furthermore, the…

This study presents a theoretical investigation of the thermoelectric properties of three-dimensional magnetic topological insulators (TIs), with a focus on the role of exchange interactions between magnetic dopants. The presence of these…

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…

We prove that any forms of electric current measurements within a gapped or gapless quantum system necessarily violate the time reversal symmetry (TRS). We then use the ionization energy theory to unequivocally show that the metallic…

At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an…

Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface…

We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the…

We consider the interplay of disorder and interactions upon the gapless surface states of 3D topological superconductors. The combination of topology and superconducting order inverts the action of time-reversal symmetry, so that extrinsic…

We investigate interaction effects in three dimensional weak topological insulators (TI) with an even number of Dirac cones on the surface. We find that the surface states can be gapped by a surface charge density wave (CDW) order without…

We demonstrate that topological insulators exhibit an intrinsic interfacial instability that amplifies small interface fluctuations, resulting in chaotic behavior during interface growth. This mechanism is fundamentally different from…

Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological…

We study time-reversal-invariant topological superconductivity in topological insulator (TI) thin films including both intra- and inter-surface pairing. We find a nontrivial topology for multiple different configurations. For intra-surface…

Topological insulators with a time reversal symmetry breaking perturbation near the surface present a magnetoelectric response that is quantized when the frequency of the probing fields is much smaller than the surface gap induced by the…

The scaling of Si transistor technology has resulted in a remarkable improvement in the performance of integrated circuits over the last decades. However, scaled transistors also require reduced electrical interconnect dimensions, which…

Topological insulators are characterized by the presence of gapless surface modes protected by time-reversal symmetry. In three space dimensions the magnetoelectric response is described in terms of a bulk theta term for the electromagnetic…

Gapless surface states that are protected by time reversal symmetry and charge conservation are among the manifestations of 3D topological insulators. In this work we study how electron-electron interaction may lead to spontaneous breaking…