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相关论文: Distribution of current fluctuations in a bistable…

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We study the effect of a single bistable scatterer on conductance of mesoscopic conductors in the crossover regime from open to closed systems. After the resistance of the contact between the metallic grain and bulk electrode exceeds the…

凝聚态物理 · 物理学 2016-08-31 Vladimir I. Fal'ko

We study switching current distributions in superconducting nanostrips using theoretical models and numerical simulations. Switching current distributions are commonly measured in experiments and may provide a window into the microscopic…

超导电性 · 物理学 2024-06-28 Robert Vedin , Jack Lidmar

We calculate the fluctuating voltage V(t) over a conductor driven out of equilibrium by a current source. This is the dual of the shot noise problem of current fluctuations I(t) in a voltage-biased circuit. In the single-channel case the…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Kindermann , Yu. V. Nazarov , C. W. J. Beenakker

Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent tunneling of electrons through a single level in the dot has been studied. We have found that…

介观与纳米尺度物理 · 物理学 2009-11-07 D. Fedorets , L. Y. Gorelik , R. I. Shekhter , M. Jonson

Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we evaluate current distribution in a single-electron transistor in a regime where a total tunnel resistance is small. Nonequilibrium quantum fluctuations…

介观与纳米尺度物理 · 物理学 2017-08-23 Yasuhiro Utsumi

Tensor networks are employed to characterize the current fluctuations in one-dimensional diffusion-reaction systems. The representative system under study is a semiconducting material where holes and electrons constitute two types of charge…

统计力学 · 物理学 2025-12-16 Jiayin Gu

Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…

材料科学 · 物理学 2009-11-07 C. Rossel , G. I. Meijer , D. Bremaud , D. Widmer

Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between…

介观与纳米尺度物理 · 物理学 2010-11-25 M. A. Laakso , T. T. Heikkilä , Yuli V. Nazarov

The counting statistics of electron transport is theoretically studied in a system with two capacitively coupled parallel transport channels. Each channel is composed of a quantum dot connected by tunneling to two reservoirs. The…

介观与纳米尺度物理 · 物理学 2015-05-28 Gregory Bulnes Cuetara , Massimiliano Esposito , Pierre Gaspard

We study the statistical properties of currents in two particular systems of capacitively coupled parallel transport channels. In the first system, each transport channel contains a single quantum dot in contact with two electron…

介观与纳米尺度物理 · 物理学 2013-10-03 Gregory Bulnes Cuetara

We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric…

统计力学 · 物理学 2021-02-08 Jiayin Gu , Pierre Gaspard

We present measurements of the time-dependent fluctuations in electrical current in a voltage-biased tunnel junction. We were able to simultaneously extract the first three moments of the tunnel current counting statistics. Detailed…

介观与纳米尺度物理 · 物理学 2008-04-12 Yu. Bomze , G. Gershon , D. Shovkun , L. S. Levitov , M. Reznikov

The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…

统计力学 · 物理学 2022-12-20 Ashwin Gopal , Massimiliano Esposito , Nahuel Freitas

The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe…

介观与纳米尺度物理 · 物理学 2009-10-30 Alexander van Oudenaarden , M. H. Devoret , E. H. Visscher , Yu. V. Nazarov , J. E. Mooij

We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we…

介观与纳米尺度物理 · 物理学 2009-10-28 D. H. Cobden , E. Kogan

We analyze the noise in a multi-terminal multi-channel conductor under arbitrary time-dependent driving and subject to -- possibly large -- static potential and temperature biases. We show that the full out-of-equilibrium zero-frequency…

介观与纳米尺度物理 · 物理学 2025-09-10 Ludovico Tesser , José Balduque , Janine Splettstoesser

This paper reports a relation between ionic conductivity and electric current fluctuations. The relation was derived using statistical analysis and entropy approach. The relation can be used to calculate ionic conductivity.

统计力学 · 物理学 2016-07-26 Yong-Jun Zhang

We calculate the counting statistics of electron transfer through an open quantum dot with charging interaction. A dot that is connected to leads by two single-channel quantum point contacts in an in-plane magnetic field is described by a…

介观与纳米尺度物理 · 物理学 2009-11-10 Markus Kindermann , Bjoern Trauzettel

We investigate a particular phase transition between two different tunneling regimes, direct and injection (Fowler-Nordheim), experimentally observed in the current-voltage characteristics of the light receptor bacteriorhodopsin (bR). Here,…

统计力学 · 物理学 2012-04-17 E. Alfinito , J. F. Millithaler , L. Reggiani

Universal conductance fluctuations are usually observed in the form of aperiodic oscillations in the magnetoresistance of thin wires as a function of the magnetic field B. If such oscillations are completely random at scales exceeding…

无序系统与神经网络 · 物理学 2020-06-24 V. V. Brazhkin , I. M. Suslov
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