相关论文: Minority-carrier dynamics in semiconductors probed…
The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows…
Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this…
Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic…
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muon spin spectroscopy technique can optically generate excess…
The increased complexity and reduced size of (opto-)electronic devices demands for quantitative descriptions of excess carrier transport and recombination via various mechanisms. In addition, experimental methods capable of resolving…
The measurement of the minority carrier lifetime is a powerful tool in the field of semiconductor material characterization as it is very sensitive to electrically active defects. Furthermore, it is applicable to a wide range of samples…
The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and…
Halide perovskites have shown great potential for light emission and photovoltaic applications due to their remarkable electronic properties and compatibility with cost-effective fabrication techniques. Although the device performances are…
Transient Photoluminescence Microscopy (TPLM) allows for the direct visualization of carrier transport in semiconductor materials with sub nanosecond and few nanometer resolution. The technique is based on measuring changes in the spatial…
Measurements of charge-carrier lifetime in many early-stage thin-film photovoltaic materials can be arduous due to the prevalence of defects and limited information about material properties. In this perspective, we give a brief overview of…
We spatially resolve photocarrier dynamics in halide perovskites using time-resolved electrostatic force microscopy (trEFM) to map surface potential equilibration during photoexcitation. Following treatment with different surface…
Experiments on carrier recombination in two-dimensional organic structures are often interpreted in the frame of the Langevin model with taking into account only the drift of the charge carriers in their mutual electric field. While this…
A simple yet precise optical technique for measuring the ambipolar carrier mobility in semiconductors is presented. Using tightly focused Gaussian laser beams in a photo-reflectance system, the modulated reflectance signal is measured as a…
The photoluminescence in amorphous semiconductors decays according to power law $t^{-delta}$ at long times. The photoluminescence is controlled by dispersive transport of electrons. The latter is usually characterized by the power $alpha$…
Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role…
Scanning photocurrent microscopy (SPCM) has been widely used for characterizing charge transport properties, in particular, the minority carrier diffusion length of semiconductors. However, studying lightly doped or intrinsic semiconductors…
Thin films are gaining ground in photonics and optoelectronics, promising improvements in their efficiency and functionality as well as decreased material usage as compared to bulk technologies. However, proliferation of thin films would…
We have applied the photoexcited muon spin spectroscopy technique (photo-$\mu$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin…
Halide perovskites have remarkable properties for relatively crudely processed semiconductors, including large optical absorption coefficients and long charge carrier lifetimes. Thanks to such properties, these materials are now competing…
The photoluminescence decay in amorphous semiconductors is described by power law $t^{-delta}$ at long times. The power-law decay of photoluminescence at long times is commonly observed but recent experiments have revealed that the…