相关论文: Giant interfacial perpendicular magnetic anisotrop…

Magnetic trilayers having large perpendicular magnetic anisotropy (PMA) and high spin-orbit torques (SOTs) efficiency are the key to fabricate nonvolatile magnetic memory and logic devices. In this work, PMA and SOTs are systematically…

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to…

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order…

Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…

Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of…

We theoretically investigate magnetic anisotropy in materials with non-critical elements to determine which symmetry conditions and atomic shell filling favor enhanced magnetic anisotropy. We study the magnetocrystalline anisotropies (MCA)…

We propose that Cu-substituted Fe$_2$P, (Fe$_{1-x}$Cu$_x$)$_2$P ($x\sim 0.16$), to be an outstanding contender for the STT-MRAM application. Using first principles based calculations in the framework of density functional theory and through…

Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicular magnetic…

The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…

It is shown that in external magnetic fields, a uniaxial magnetic anisotropy comes into being in a magnetoactive elastomer (MAE). The magnitude of the induced uniaxial anisotropy grows with the increasing external magnetic field. The filler…

We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using…

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…

Iron-based layered systems are of great interest because of their ability to tune effective material parameters such as magnetic anisotropy energy (MAE). The influence of the crystallographic structure of Fe, its thickness, and the presence…

We perform first principles calculations of the magnetocrystalline anisotropy energy (MAE) of the L1_{0}-like Fe_{x}Pt_{1-x} samples studied experimentally by Barmak and co-workers in [J. Appl. Phys. 98 (2005) 033904]. The variation of…

We report on the magnetic properties of Co$\_x$Pt$\_{1-x}$ clusters embedded in various matrices. Using a careful analysis of magnetization curves and ZFC susceptibility measurements, we determine the clusters magnetic anisotropy energy…

Exploring giant magnetic anisotropy in small magnetic nanostructures is of both fundamental interest and technological merit for information storage. To prevent spin flipping at room temperature due to thermal fluctuation, large magnetic…

We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the…

We investigate the effect of capping layer (CAP) on the interfacial magnetic anisotropy energy density (K_S), magnetic damping ({\alpha}), and spin-orbit torques (SOTs) in heavy-metal (Pt) / ferromagnet (Co or Py) / CAP (MgO/Ta, HfOx, or…

The impact of reduced dimensionality on the magnetic properties of the tetragonal L1$_{0}$ CoPt alloy is investigated from ab-initio considering several kinds of surface defects. By exploring the dependence of the magnetocrystalline…

Search for single-molecule magnets with large magnetic anisotropy energy (MAE) is essential for the development of molecular spintronics devices used at room temperature. Through systematic first-principles calculations, we found that an…