相关论文: Micro-electromechanical memory bit based on magnet…

We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…

We propose an optical memory cell based on ultrafast wavelength switching in coupled-cavity microlasers, featuring bistability between modes separated by several nanometers. A numerical implementation is demonstrated by simulating a…

Mechanical metamaterials with bistable elements can store vast amounts of information, but writing these memories requires impractical local control or lengthy multi-cycle protocols. We overcome this limitation with a dynamic control…

The reservoir computing based on the thin film embedded with magnetic impurities in the presence of the long-range (the dipole-dipole) interaction is numerically investigated. We simulated the magnetization dynamics by taking into account…

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…

This paper presents a model-free adaptive control approach to suppress vibrations in a cantilevered beam excited by an unknown disturbance. The cantilevered beam under harmonic excitation is modeled using a lumped parameter approach. Based…

Reservoir Computing offers a great computational framework where a physical system can directly be used as computational substrate. Typically a "reservoir" is comprised of a large number of dynamical systems, and is consequently…

Magnetometer is a significant sensor for integrated navigation. However, it suffers from many kinds of unknown dynamic magnetic disturbances. We study the problem of online estimating such disturbances via a nonlinear optimization aided by…

Magnetic phases are commonly identified through macroscopic magnetization, yet many ordered states, including antiferromagnets and altermagnets, possess a vanishing net moment despite distinct local spin structure. We show that such an…

We investigate a variational theory for magnetoelastic solids under the incompressibility constraint. The state of the system is described by deformation and magnetization. While the former is classically related to the reference…

We analyzed the magnetoresistivity of a two-dimensional electron system excited by microwave radiation in a regime of high intensities and low frequencies. In such a regime, recent experiments show that different features appear in the…

We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

It is assumed that in a two-dimensional electron system with strong correlation (a Wigner liquid), appearance of some relatively slow-moving objects (clusters) composed of small number of electrons is possible. Such clusters may exist in…

Memristor, one of the fundamental circuit elements, has promising applications in non-volatile memory and storage technology as it can theoretically achieve infinite states. Information can be stored independently in these states and…

We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…

We demonstrate here a proof-of-concept experiment that microelectromechanical systems (MEMS) can be actuated using photoelectrowetting. In order to demonstrate this, a 30 \mu m thick aluminum cantilever is actuated using an ordinary white…

We study the opportunity to reduce a magnetic noise produced by a uniform cantilever with a ferromagnetic particle in magnetic resonance force microscopy (MRFM) applications. We demonstrate theoretically a significant reduction of magnetic…

The hole distribution in a double quantum well (QW) structure consisting of a magnetic and a nonmagnetic semiconductor QW is investigated as a function of temperature, the energy shift between the QWs, and other relevant parameters. When…