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相关论文: Memristive GaN ultrathin suspended membrane array

200 篇论文

We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an ordered arrays of silica pillars of variable geometries.…

Graphene oxide membranes show exceptional molecular permeation properties, with a promise for many applications. However, their use in ion sieving and desalination technologies is limited by a permeation cutoff of ~9 Angstrom, which is…

MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate…

Magnon transport through a magnetic insulator can be controlled by current-biased heavy-metal gates that modulate the magnon conductivity via the magnon density. Here, we report nonlinear modulation effects in 10$\,$nm thick yttrium iron…

介观与纳米尺度物理 · 物理学 2021-06-23 J. Liu , X-Y. Wei , G. E. W. Bauer , J. Ben Youssef , B. J. van Wees

We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultra-thin free-standing silicon membranes. Using an ultrafast pump-probe technique of asynchronous optical sampling, we observe that the decay time…

介观与纳米尺度物理 · 物理学 2015-06-11 J. Cuffe , O. Ristow , E. Chávez , A. Shchepetov , P-O. Chapuis , F. Alzina , M. Hettich , M. Prunnila , J. Ahopelto , T. Dekorsy , C. M. Sotomayor Torres

Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…

介观与纳米尺度物理 · 物理学 2018-12-20 S. Schmult , S. Wirth , V. V. Solovyev , R. Hentschel , A. Wachowiak , A. Großer , I. V. Kukushkin , T. Mikolajick

Acquiring a portable high density charged particles trap might consist of an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barriers potential than conventional Penning-Malmberg traps [1]. We report on the…

仪器与探测器 · 物理学 2013-07-10 Alireza Narimannezhad , Joshah Jennings , Marc H. Weber , Kelvin G. Lynn

Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…

Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated…

We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change growth conditions from N-rich to metal-rich in order to…

Coupling high quality, suspended atomic membranes to specialized electrodes enables investigation of many novel phenomena, such as spin or Cooper pair transport in these two dimensional systems. However, many electrode materials are not…

介观与纳米尺度物理 · 物理学 2015-05-20 Jairo Velasco , Zeng Zhao , Hang Zhang , Fenglin Wang , Zhiyong Wang , Philip Kratz , Lei Jing , Wenzhong Bao , Jing Shi , Chun Ning Lau

Metamaterials are structures engineered at a small scale with respect to the wavelength of the excitations they interact with. These structures behave as artificial materials whose properties can be chosen by design, mocking and even…

应用物理 · 物理学 2023-06-26 G. Conte , L. Vicarelli , S. Zanotto , A. Pitanti

Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep…

In this paper, we investigate the training process of generative networks that use a type of probability density distance named particle-based distance as the objective function, e.g. MMD GAN, Cram\'er GAN, EIEG GAN. However, these GANs…

机器学习 · 计算机科学 2023-07-10 Chuqi Chen , Yue Wu , Yang Xiang

The resonance frequency of ultra-thin layered two-dimensional (2D) materials changes nonlinearly with the tension induced by the pressure from the surrounding gas. Although the dynamics of pressurized 2D material membranes have been…

The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…

介观与纳米尺度物理 · 物理学 2008-10-02 Xu Du , Ivan Skachko , Anthony Barker , Eva Y. Andrei

Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to…

Density-functional studies of the electron states in the dilute magnetic semiconductor GaN:Mn reveal major differences for the case of the Mn impurity at the substitutional site Mn_Ga versus the interstitial site Mn_I. The splitting of the…

材料科学 · 物理学 2009-11-10 Z. S. Popovic , S. Satpathy , W. C. Mitchel

Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In…

超导电性 · 物理学 2021-04-27 C. Kopas , S. Zhang , J. Gonzales , D. R. Queen , B. Wagner , R. W. Carpenter , N. Newman

Graphene is a wonder material with many superlatives to its name. It is the thinnest material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have the smallest effective mass (it is…

介观与纳米尺度物理 · 物理学 2010-08-27 A. K. Geim