相关论文: Gate-induced Gap in Bilayer Graphene Suppressed by…

We study effects of a repulsive Coulomb interaction on the spectral gap in monolayer and bilayer graphene in the vicinity of the charge neutrality point by employing the functional renormalization-group technique. In both cases Coulomb…

The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated…

The Coulomb interaction is widely known to enhance the effective mass of interacting particles and therefore tends to favor a localized state at commensurate filling. Here, we will show that, in contrast to this consensus, in a van der…

Both insulating and conducting electronic behaviors have been experimentally seen in clean bilayer graphene samples at low temperature, and there is still no consensus on the nature of the interacting ground state at half-filling and in the…

We report on our studies of interacting electrons in bilayer graphene in a magnetic field. We demonstrate that the long range Coulomb interactions between electrons in this material are highly important and account for the band asymmetry in…

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…

We have investigated the Coulomb screening properties and plasmon spectrum in a bilayer graphene under a perpendicular electric bias. The bias voltage applied between the two graphene layers opens a gap in the single particle energy…

We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not…

We analyze the phase diagram of twisted graphene bilayers near a magic angle. We consider the effect of the long range Coulomb interaction, treated within the self consistent Hartree-Fock approximation, and we study arbitrary band fillings.…

It is a matter of current debate whether the gate-tunable superconductivity in twisted bilayer graphene is phonon-mediated or arises from electron-electron interactions. The recent observation of the strong coupling of electrons to…

We study analytically and numerically dynamics and eigenstates of two electrons with Coulomb repulsion on a tight-binding lattice in one and two dimensions. The total energy and momentum of electrons are conserved and we show that for a…

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…

We theoretically calculate the interaction-induced frictional Coulomb drag resistivity between two graphene monolayers as well as between two graphene bilayers, which are spatially separated by a distance "$d$". We show that the drag…

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…

We report Coulomb drag studies in an electron-hole bilayer graphene heterostructure in a magnetic field, where the orbital, spin, and valley degrees of freedom are lifted by the combined effects of exchange interaction, Zeeman energy, and…

We report on our studies of interacting electrons in bilayer graphene in a magnetic field. We demonstrate that the long range Coulomb interactions between electrons in this material are highly important. We show that in the unbiased bilayer…

In this paper, we consider the spectral properties of the bilayer graphene with the local excitonic pairing interaction between the electrons and holes. We consider the generalized Hubbard model, which includes both intralayer and…

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes…

A fully selfconsistent treatment for gap generation and Coulomb screening in excitonic insulators is presented. The method is based on the equations of motion for the relevant dynamical variables combined with a variational approach.…