相关论文: Investigating the Temperature Effects on Resistive…
The thermal memory effect, TME, has been studied in Ni55Fe19Ga26 shape memory alloys, fabricated as ribbons via melt-spinning and as pellets via arc-melting, to evaluate its dependence on the martensitic structure and the macrostructure of…
The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a…
Magetoresistive Random Access Memory (MRAM) was irradiated by 60Co {\gamma}-rays and electron beam. The test of synergistic effect was performed under additional magnetic field when irradiation. We analyzed Total Ionizing Dose (TID) and…
A new experimental test bed has been designed, built, and tested to evaluate the effect of the systems parameters on a reciprocating Active Magnetic Regenerator (AMR) near room temperature. Bulk gadolinium was used as the refrigerant,…
The effect of substrate thickness and its Debye temperature on the bolometric response of the freestanding-membrane type of superconductor transition-edge detectors is investigated. The investigation is based on the calculation of the…
We report an experimental demonstration of thermal tuning of resonance frequency in a planar terahertz metamaterial consisting of a gold split-ring resonator array fabricated on a bulk single crystal strontium titanate (SrTiO3) substrate.…
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K…
In this work, ML models were used to predict the plasma temperature using the dataset obtained by implementing the CR-model for Na-like Krypton. The models included in the study are: Linear Regression, Lasso Regression, Support Vector…
Recent advancement in superconducting radio frequency cavity processing techniques, with diffusion of impurities within the RF penetration depth, resulted in high quality factor with increase in quality factor with increasing accelerating…
We report the analysis of measurements of the complex magnetic permeability ($\mu_r$) and dielectric permittivity ($\epsilon_r$) spectra of a rubber radar absorbing material (RAM) with various MnZn ferrite volume fractions. The…
We investigated complex magnetic properties of multifunctional LaCrO3-LaFeO3 system. The magnetic measurements substantiate the presence of competing complex magnetic ordering against temperature, showing paramagnetic to ferrimagnetic…
We investigated the effects of temperature and magnetic field on the electronic structure of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using optical spectroscopy. As the magnetic ordering of the system was disturbed, a systematic…
RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…
In this paper, we explore the far-field radiative thermal rectification potential of common materials such as metals, dielectrics and doped semi-conductors using radiative and thermo-radiative properties extracted from literature. Ten…
In the field of rehabilitation and neuroscience shape memory alloys play a crucial role as lightweight actuators. Devices are exploiting the shape memory effect by transforming heat into mechanical work. In rehabilitation applications,…
This paper reports the impacts of temperature variation on the inference accuracy of pre-trained all-ferroelectric FinFET deep neural networks, along with plausible design techniques to abate these impacts. We adopted a pre-trained…
Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip…
Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-device (D2D) variability which is related to the intrinsic…
The electrical properties and performance characteristics of niobium dioxide (NbO$_\mathrm{2}$)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric Nb$_\mathrm{2}$O$_\mathrm{5}$ was deposited via magnetron…
Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely…