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We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

材料科学 · 物理学 2015-09-30 M. Pelc , W. Jaskólski , A. Ayuela , L. Chico

Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…

介观与纳米尺度物理 · 物理学 2010-09-28 Oleg V. Yazyev , Steven G. Louie

Graphene two-dimensional nature combined with today lithography allows to achieve nanoelectronics devices smaller than the Dirac electrons wavelength. Here we show that in these graphene subwavelength nanodevices the electronic quantum…

介观与纳米尺度物理 · 物理学 2010-09-08 Pierre Darancet , Valerio Olevano , Didier Mayou

By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano-devices were obtained. The scattering properties were then used with an adaptation of…

材料科学 · 物理学 2014-10-30 R. D. Y. Hills , F. V. Kusmartsev

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes…

Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G…

介观与纳米尺度物理 · 物理学 2015-02-09 Tom Yager , Arseniy Lartsev , Rositza Yakimova , Samuel Lara-Avila , Sergey Kubatkin

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…

介观与纳米尺度物理 · 物理学 2015-05-14 L. A. Falkovsky

The coupling of charge carrier motion and pseudospin via chirality for massless Dirac fermions in monolayer graphene has generated dramatic consequences, such as the unusual quantum Hall effect and Klein tunneling. In bilayer graphene,…

介观与纳米尺度物理 · 物理学 2016-11-17 Kyunghoon Lee , Seunghyun Lee , Yun Suk Eo , Cagliyan Kurdak , Zhaohui Zhong

Fermi line of bilayer graphene at zero energy is transformed into four separated points positioned trigonally at the corner of the hexagonal first Brillouin zone. We show that as a result of this trigonal splitting the minimal conductivity…

介观与纳米尺度物理 · 物理学 2009-11-13 Ali G. Moghaddam , Malek Zareyan

Electronic transport properties of monolayer graphene with extreme physical bending up to 90o angle are studied using ab Initio first-principle calculations. The importance of key structural parameters including step height, curvature…

量子物理 · 物理学 2011-01-31 Haiyuan Gao , Yang Xu , Meijiao Li , Zhendong Guo , Hongshen Chen , Zhonghe Jin , Bin Yu

Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…

介观与纳米尺度物理 · 物理学 2009-07-24 J. R. Williams , D. A. Abanin , L. DiCarlo , L. S. Levitov , C. M. Marcus

We study the low-energy electronic transport across periodic extended defects in graphene. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where Dirac Hamiltonian governs the…

介观与纳米尺度物理 · 物理学 2012-12-14 J. N. B. Rodrigues , N. M. R. Peres , J. M. B. Lopes dos Santos

Magnetic barriers in graphene are not easily tunable. However, introducing both electric and magnetic fields, provides tunable and far more controllable electronic states in graphene. Here we study such systems. A one-dimensional channel…

介观与纳米尺度物理 · 物理学 2010-02-09 Yury P. Bliokh , Valentin Freilikher , Franco Nori

Novel physical properties have been reported recently by stacking graphene-like systems in different configurations. Here, we explore the nature of emergent localized states at the edges of twisted bilayer graphene nanoribbons. Based on an…

其他凝聚态物理 · 物理学 2025-05-13 Kevin J. U. Vidarte , A. B. Felix , A. Latgé

It has been shown that the Kohn--Luttinger superconductivity mechanism interplaying with other types of ordering can be implemented in systems with a hexagonal lattice. A number of unusual properties of such systems in the normal phase have…

The band structure and transport properties of massive Dirac Fermions in bilayer graphene with velocity modulation in space are investigated in presence of the previously created band gap. It is pointed out that the velocity engineering is…

介观与纳米尺度物理 · 物理学 2013-11-27 Hosein Cheraghchi , Fatemeh Adinehvand

We investigate theoretically the electronic transport properties in narrow graphene ribbons with an adatom-induced defect. It is found that the lowest conductance step of a metallic graphene nanoribbon may develop a dip even down to zero at…

介观与纳米尺度物理 · 物理学 2009-03-05 Jie-Yun Yan , Ping Zhang , Bo Sun , Hai-Zhou Lu , Zhigang Wang , Suqing Duan , Xian-Geng Zhao

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

We study the conductivity of graphene with a smooth but particle-hole-asymmetric disorder potential. Using perturbation theory for the weak-disorder regime and numerical calculations we investigate how the particle-hole asymmetry shifts the…

介观与纳米尺度物理 · 物理学 2016-01-12 Max Hering , Martin Schneider , Piet W. Brouwer

We consider the instability of bilayer graphene with respect to a distorted configuration in the same spirit as the model introduced by Su, Schrieffer and Heeger. By computing the total energy of a distorted bilayer, we conclude that the…

介观与纳米尺度物理 · 物理学 2009-02-12 Vitor M. Pereira , R. M. Ribeiro , N. M. R. Peres , A. H. Castro Neto