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相关论文: Electrical Switching of Magnetization in Films of …

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Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching…

Recent observations of unusual ferroelectricity in thin films of HfO_2 and related materials have attracted broad interest to the materials and led to the emergence of a number of competing models for observed behaviors. Here we develop the…

材料科学 · 物理学 2018-11-27 Maya D. Glinchuk , Anna N. Morozovska , Yunseok Kim , Sergei V. Kalinin

Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…

Muon spin rotation/relaxation measurements were performed to investigate magnetic properties of FeSe$_{1-x}$S$_x$ thin films on LaAlO$_3$. A drastic decrease of the initial asymmetry was observed together with the peak structure in the…

The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator…

Electric-field control of magnetism provides a promising route towards ultralow power information storage and sensor technologies. The effects of magneto-ionic motion have so far been prominently featured in the direct modification of…

介观与纳米尺度物理 · 物理学 2016-09-19 Dustin A. Gilbert , Alexander J. Grutter , Elke Arenholz , Kai Liu , B. J. Kirby , Julie A. Borchers , Brian B. Maranville

The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic…

Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the…

Using density functional theory we show that the interaction between two Mn atoms can be tuned from anti-ferromagnetic (AFM) to ferromagnetic (FM) state by creating charge disproportion between the two on a 2D surface. The non-metallic…

材料科学 · 物理学 2025-12-22 Mihir Ranjan Sahoo , Saroj Kumar Nayak , Kalpataru Pradhan

The increased spectral resolution allowed by the use of extremely thin vapor cells has led to the observation of interesting behaviour of alkali transitions when placed in a magnetic field. Particularly, transitions obeying an apparent…

原子物理 · 物理学 2022-04-06 Armen Sargsyan , Arevik Amiryan , Ara Tonoyan , Emmanuel Klinger , David Sarkisyan

We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer…

介观与纳米尺度物理 · 物理学 2020-10-02 Shehrin Sayed , Cheng-Hsiang Hsu , Niklas Roschewsky , See-Hun Yang , Sayeef Salahuddin

We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several…

材料科学 · 物理学 2007-05-23 H. Schneider , Ch. Herbort , G. Jakob , H. Adrian , S. Wurmehl , C. Felser

Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…

The temperature-driven reorientation transition which, up to now, has been studied by use of Heisenberg-type models only, is investigated within an itinerant-electron model. We consider the Hubbard model for a thin fcc(100) film together…

强关联电子 · 物理学 2009-10-31 T. Herrmann , M. Potthoff , W. Nolting

It is shown theoretically that a giant magnetoelectric susceptibility exceeding 10^-6 s/m may be achieved in the ferromagnetic/ferroelectric epitaxial systems via the magnetization rotation induced by an electric field applied to the…

材料科学 · 物理学 2009-11-13 N. A. Pertsev

We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover…

材料科学 · 物理学 2015-05-19 V. Skumryev , V. Laukhin , I. Fina , X. Martí , F. Sánchez , M. Gospodinov , J. Fontcuberta

Using first-principles density functional calculations we demonstrate that ferromagnetism can be induced and modulated on an otherwise paramagnetic Pd metal thin-film surface through application of an external electric field. As free…

材料科学 · 物理学 2010-02-17 Yang Sun , J. D. Burton , E. Y. Tsymbal

We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The…

The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…

介观与纳米尺度物理 · 物理学 2009-10-31 C. Heide , P. E. Zilberman , R. J. Elliott

The reorientation transition of the magnetization of ferromagnetic films is studied on a microscopic basis within Heisenberg spin models. Analytic expressions for the temperature dependent anisotropy are derived from which it is seen that…

统计力学 · 物理学 2009-10-31 A. Hucht , K. D. Usadel