相关论文: Electrical Switching of Magnetization in Films of …
A series of Fe$_x$Rh$_{100-x}$ ($30 \leq x \leq 57$) films were epitaxially grown using magnetron sputtering, and were systematically studied by magnetization-, electrical resistivity-, and Hall resistivity measurements. After optimizing…
Magnetic and magnetotransport properties of oriented polycrystalline Pr0.58Ca0.42MnO3 thin films prepared in flowing oxygen and air ambient has been investigated. The magnetic ground state of both the films is a frozen cluster glass. In the…
A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the…
A single layer ferromagnetic film magnetized in the plane of an ac current flow, exhibits a characteristic Hall voltage with harmonic and second harmonic components, which is attributed to the presence of spin currents with polarization…
High quality single crystal Fe3O4 thin films with (111) orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be highly unconventional. The Verwey…
We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm-thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces…
We report on an anomalous magnetization observed with temperature for low magnetic fields applied in the plane of a film formed by a thin layer of Fe-Rh deposited on a thin foil of ordered Fe$_3$Pt. The anomalous effect resembles a…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Magnetisation dynamics in exchange spring magnets have been studied using simulations of the FePt/Fe bilayer system. The FePt hard layer exhibits strong perpendicular magnetocrystalline anisotropy, while the soft (Fe) layer has negligible…
Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type…
Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently,…
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field…
Magnetoelectric composites are an important class of multiferroic materials that pave the way towards a new generation of multifunctional devices directly integrable in data storage technology and spintronics. This study focuses on…
We present a phenomenological scheme to study the size-dependent electric voltage-controlled magnetic anisotropy in ferromagnetic (FM)/ferroelectric (FE) heterostructures. The FM layers are either metallic Fe(001), Ni(001), Co(0001), or…
Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-{\delta} (EBTO3-{\delta}) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two…
We show that Co spins in Co/FeRh epitaxial bilayers grown on W(110) switch reversibly between the two orthogonal in-plane directions as the FeRh layer undergoes temperature driven antiferromagnetic-ferromagnetic (AFM-FM) phase transition.…
We investigate the magnetization dynamics through the magnetoimpedance effect in ferromagnetic NiFe/Cu/Co films. We observe that the magnetoimpedance response is dependent on the thickness of the non-magnetic Cu spacer material, a fact…
RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to…
Modern magnetic thin film devices owe their success in large part to effects emerging from interlayer coupling and exchange interaction at interfaces. A prominent example is exchange bias (EB), a magnetic coupling phenomenon found in…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…