相关论文: Simulations of a silicon pixel based on MOS Deep T…

An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…

3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high…

A deep image compression scheme is proposed in this paper, offering the state-of-the-art compression efficiency, against the traditional JPEG, JPEG2000, BPG and those popular learning based methodologies. This is achieved by a novel…

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…

We describe a novel approach for compressing truncated signed distance fields (TSDF) stored in 3D voxel grids, and their corresponding textures. To compress the TSDF, our method relies on a block-based neural network architecture trained…

Digital pixel sensor (DPS) has evolved as a pivotal component in modern imaging systems and has the potential to revolutionize various fields such as medical imaging, astronomy, surveillance, IoT devices, etc. Compared to analog pixel…

The "pushing gate" proposed by Cirac and Zoller in 2000 for quantum logic in ion traps is discussed, in which a force is used to give a controlled push to a pair of trapped ions and thus realize a phase gate. The original proposal had a…

The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex…

A multiscale simulation method is developed to model a quantum dot (QD) array of germanium (Ge) holes for quantum computing. Guided by three-dimensional numerical quantum device simulations of QD structures, an analytical model of the…

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…

Modern scientific instruments operate under increasingly extreme constraints on bandwidth, latency, and power. Inference at the sensor edge determines experimental data collection efficiency by deciding which information to save for further…

While deep neural networks extract rich features from the input data, the current trade-off between depth and computational cost makes it difficult to adopt deep neural networks for many industrial applications, especially when computing…

We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope…

The trapped-ion system has been a leading platform for practical quantum computation and quantum simulation since the first scheme of a quantum gate was proposed by Cirac and Zoller in 1995. Quantum gates with trapped ions have shown the…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

$P$-type high-purity germanium (HPGe) detectors are widely used across many scientific domains, and current data analysis methods have served well in many use cases. However, applications like low-background experiments that search for rare…

Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…

Field effect transistors embedded into a depleted silicon bulk (DEPFETs) can be used as the first amplifying element for the detection of small signal charges deposited in the bulk by ionizing particles, X-ray photons or visible light. Very…

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…

Trapped ions offer long coherence times and high fidelity, programmable quantum operations, making them a promising platform for quantum simulation of condensed matter systems, quantum dynamics, and problems related to high-energy physics.…