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We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal…

Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent…

介观与纳米尺度物理 · 物理学 2009-11-13 J. Cayssol , B. Huard , D. Goldhaber-Gordon

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the…

Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion…

介观与纳米尺度物理 · 物理学 2017-05-16 Gang Luo , Zhuo-Zhi Zhang , Guang-Wei Deng , Hai-ou Li , Gang Cao , Ming Xiao , Guoping Guo , Guang-Can Guo

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…

介观与纳米尺度物理 · 物理学 2016-11-18 I. Meric , C. R. Dean , A. F. Young , J. Hone , P. Kim , K. L. Shepard

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

介观与纳米尺度物理 · 物理学 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene…

介观与纳米尺度物理 · 物理学 2012-01-04 Liang Feng Huang , Zhi Zeng

Technologically useful and robust graphene-based interfaces for devices require the introduction of highly selective, stable, and covalently bonded functionalities on the graphene surface, whilst essentially retaining the electronic…

Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…

介观与纳米尺度物理 · 物理学 2022-10-19 Shubhadip Moulick , Rafiqul Alam , Atindra Nath Pal

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for…

其他凝聚态物理 · 物理学 2015-05-13 Yu-Ming Lin , Keith A. Jenkins , Alberto Valdes-Garcia , Joshua P. Small , Damon B. Farmer , Phaedon Avouris

We demonstrate tunable solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite…

介观与纳米尺度物理 · 物理学 2016-05-03 Arunandan Kumar , Priyanka Tyagi , Ritu Srivastava

The concept, analysis, and design of series switches for graphene-strip plasmonic waveguides at near infrared frequencies are presented. Switching is achieved by using graphene's field effect to selectively enable or forbid propagation on a…

介观与纳米尺度物理 · 物理学 2013-09-03 J. S. Gomez-Diaz , J. Perruisseau-Carrier

Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority…

介观与纳米尺度物理 · 物理学 2022-06-28 Nathaniel J. Tye , Abdul Wadood Tadbier , Stephan Hofmann , Phillip Stanley-Marbell

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions…

The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…

A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and…

We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin…

介观与纳米尺度物理 · 物理学 2012-05-23 Pia Juliane Wessely , Frank Wessely , Emrah Birinci , Bernadette Riedinger , Udo Schwalke

The unique optical and electronic properties of graphene allow one to realize active optical devices. While several types of graphene-based photonic modulators have already been demonstrated, the potential of combining the versatility of…

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…

材料科学 · 物理学 2009-12-25 Fengnian Xia , Thomas Mueller , Yu-ming Lin , Alberto Valdes-Garcia , Phaedon Avouris

Liquid-based applications of biomolecule-decorated field-effect transistors (FETs) range from biosensors to in vivo implants. A critical scientific challenge is to develop a quantitative understanding of the gating effect of charged…

介观与纳米尺度物理 · 物理学 2017-08-31 Jinglei Ping , Jin Xi , Jeffery G. Saven , Renyu Liu , A. T. Charlie Johnson