相关论文: Repairing atomic vacancies in single-layer MoSe2 f…
We perform first-principles electron-phonon interaction (EPI) calculations based on many-body perturbation theory to study the temperature-dependent band-gap and charge-carrier transport properties for Mg$_{2}$Si and Ca$_{2}$Si using the…
Structural defects in 2D-transition metal dichalcogenides are critical in modulating their optical and electrical behavior. Nevertheless, precise defect control within the monolayer regime poses a significant challenge. Herein, a…
Using {\em ab initio} density functional theory calculations, we characterize changes in the electronic structure of MoS$_{2}$ monolayers introduced by missing or additional adsorbed sulfur atoms. We furthermore identify the chemical and…
Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual…
Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been…
Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and…
Assessing atomic defect states and their ramifications on the electronic properties of two dimensional van der Waals semiconducting transition metal dichalcogenides (SC TMDs) is the primary task to expedite multi disciplinary efforts in the…
The effects of iron deficiency in FexSe0.5Te0.5 thin films (0.8<x<1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (TC) up to 21K was observed in…
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage,…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…
The thermal conductivities of pristine and defective tungsten diselenide (WSe2) are investigated by using equilibrium molecular dynamics method. The thermal conductivity of WSe2 increases dramatically with size below a characteristic with…
The exact microscopic origin, symmetry, and thermal melting mechanism of the charge density wave (CDW) phase in TiSe$_{2}$ remain a subject of intense debate, particularly regarding the presence of chiral structural order and a multi-step…
We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the…
The temperature-induced structural and electronic transformation in VO$_2$ between the monoclinic M1 and tetragonal rutile phases was studied by means of \textit{ab initio} molecular dynamics, based on density functional theory with Hubbard…
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…
Large-amplitude electrostatic fluctuations are routinely observed by spacecraft upon traversal of collisionless shocks in the heliosphere. Kinetic simulations of shocks have struggled to reproduce the amplitude of such fluctuations,…
The room temperature ``metallic'' properties of the quasi-one-dimensional charge density wave system (TaSe4)2I differ markedly from those expected of either a Fermi or a Luttinger Liquid. We discuss evidence for the simplest possible…
Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect…
Two dimensional semiconductor such as single-layer transition metal dichalcogenides (SL-TMD) have attracted most attentions as an atomically thin layer semiconductor materials. Typically, lattice point defects (sulfur vacancy) created by…