相关论文: Electron Paramagnetic Resonance of Single Magnetic…

The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…

We develop a microscopic theory of spin noise in solid-state systems at electron paramagnetic resonance, when the spin dynamics is driven by static and radio-frequency (RF) magnetic fields and the stochastic effective magnetic field…

We propose a model to account for the observed ESR-like signal at the Larmor frequency in the current noise STM experiments identifying spin centers on various substrates. The theoretical understanding of this phenomenon, which allows for…

We report the detection of electron spin resonance (ESR) in individual dimers of the stable free radical 2,2,6,6-tetramethyl-piperidine-1-oxyl (TEMPO). ESR is measured by the current fluctuations in a scanning tunnelling microscope (ESR-STM…

The recent experimental conductance measurements taken on magnetic impurities on metallic surfaces, using scanning tunneling microscopy technique and suggesting occurrence of inelastic scattering processes, are theoretically addressed. We…

A spin- and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated current-voltage characteristics in an external magnetic field…

Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet nanojunction. The macrospin approximation is generalized to antiferromagnets. Canted…

Electron spin resonance (ESR) spectroscopy in scanning tunneling microscopy (STM) has enabled probing the electronic structure of single magnetic atoms and molecules on surfaces with unprecedented energy resolution, as well as demonstrating…

We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…

We show that in the presence of ferromagnetic electronic reservoirs and spin-dependent tunnel couplings, molecular vibrations in nonmagnetic single molecular transistors induce an effective intramolecular exchange magnetic field. It…

A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…

Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…

A pure spin current generated within a nonlocal spin valve can exert a spin transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages…

The influence of the intrinsic spin of electrons on the propagation of circularly polarized waves in a magnetized plasma is considered. New eigenmodes are identified, one of which propagates below the electron cyclotron frequency, one above…

Effects of an incoming spin-polarized current on a magnetic moment are explored. We found that the spin torque occurs only when the incoming spin changes as a function of time inside of the magnetic film. This implies that some…

The spin torque exerted on a magnetic moment is a reaction to spin filtering when spin-polarized electrons interact with a thin ferromagnetic film. We show that, for certain conditions, a spin transmission resonance (STR) gives rise to a…

Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…

We consider the problem of tunneling between two leads via a localized spin 1/2 or any other microscopic system which can be modeled by a two-level Hamiltonian. We assume that a constant magnetic field ${\bf B}_0$ acts on the spin, that…

Spin dependent single electron tunneling in a ferromagnetic double junction is investigated theoretically in the limit of incoherent sequential tunneling. The junction consists of a small nonmagnetic metallic grain with discrete energy…