相关论文: Understanding topological phase transition in tran…
Several monolayer transition metal dichalcogenides (TMDs) are direct band gap semiconductors and potentially efficient emitters in light emitting devices. Photons are emitted when strongly bound excitons decay radiatively, and accurate…
Transition-metal dichalcogenides (TMDs) $MX_2$ ($M$ = Ti, Nb, Ta; $X$ = S, Se, Te) exhibit a rich set of charge density wave (CDW) orders, which usually coexist and/or compete with superconductivity. The mechanisms of CDWs and…
Molybdenum ditelluride, MoTe2, is a versatile material where the topological phase can be readily tuned by manipulating the associated structural phase transition. The fine details of the band structure of MoTe2, key to understanding its…
Transition metal dichalcogenide (TMD) monolayers attract great attention due to their specific structural, electronic and mechanical properties. The formation of their lateral heterostructures allows a new degree of flexibility in…
The moir\'e superlattices formed by stacking 2D semiconducting transition metal dichalcogenides (TMDs) with twisting angle or lattice mismatch have provided a versatile platform with unprecedented tunability for exploring many frontier…
We present a comprehensive first-principles study of the structural and elastic properties of 2H-MX$_2$ transition metal dichalcogenides (TMDs) (M = W, Mo, Ta, Nb; X = S, Se). Using density functional theory with various van der Waals…
Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe$_2$. ARPES studies on ZrTe$_2$ demonstrate free charge carriers at the…
Two-dimensional electron dispersions with peculiar band crossings provide a platform for realizing topological phases of matter. Here we theoretically show that the $e_g$-orbital manifold of honeycomb-layered transition metal compounds…
Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the…
Topological quantum phase transitions (TQPTs) in a material induced by external perturbations are often characterized by band touching points in the Brillouin zone. The low-energy excitations near the degenerate band touching points host…
In moir\'e materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) --…
In many realistic topological materials, more than one kind of fermions contribute to the electronic bands crossing the Fermi level, leading to various novel phenomena. Here, using momentum-resolved inelastic electron scattering, we…
We investigate proximity-induced superconductivity in monolayers of transition metal dichalcogenides (TMDs) in the presence of an externally generated exchange field. A variety of superconducting order parameters is found to emerge from the…
Using first-principles calculations we show that the band gap of bilayer sheets of semiconducting transition metal dichalcogenides (TMDs) can be reduced smoothly by applying vertical compressive pressure. These materials undergo a universal…
The optical selection rule states that opposite parity between the valence and conduction bands is required for optical absorption to occur. However, monolayer hexagonal transition metal dichalcogenides (h-TMDs) such as $ \mathrm{MoS}_{2} $…
We present a state-of-the-art density functional theory (DFT) study which models crucial features of the partially disordered orbital order stacking in the prototypical layered transition metal dichalcogenide 1T-TaS2 . Our results not only…
Transition Metal Dichalcogenides (TMDs) are one of the most studied two-dimensional materials in the last 5-10 years due to their extremely interesting layer dependent properties. Despite the presence of vast research work on TMDs, the…
We propose twisted bilayers of certain group IV and IVB trigonal transition metal dichalcogenides (TMDs) MX$_{2}$ (M$=$Zr, Hf, Sn and X$=$S, Se) as moir\'{e} materials. In monolayer form these TMDs have conduction band minima near the three…
Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with lower tendency to form defect induced deep gap states are…
Transition metal dichalcogenide (TMD) bilayers with an interlayer twist exhibit a moire super-period, whose effects can manifest in both structural and electronic properties. Atomic displacements can lead to reconstruction into domains of…