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Symmetry breaking in quantum materials is of great importance and can lead to nonreciprocal charge transport. Topological insulators provide a unique platform to study nonreciprocal charge transport due to their surface states, especially…

介观与纳米尺度物理 · 物理学 2024-03-28 Chunfeng Li , Rui Wang , Shuai Zhang , Yuyuan Qin , Zhe Ying , Boyuan Wei , Zheng Dai , Fengyi Guo , Wei Chen , Rong Zhang , Baigeng Wang , Xuefeng Wang , Fengqi Song

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers,…

In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…

介观与纳米尺度物理 · 物理学 2013-02-08 G. Tkachov , E. M. Hankiewicz

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…

介观与纳米尺度物理 · 物理学 2018-04-11 R. M. Ireland , Liang Wu , M. Salehi , S. Oh , N. P. Armitage , H. E. Katz

Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI…

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…

Two-dimensional electron systems (2DES) are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or…

Since the notion of topological insulator (TI) was envisioned in late 2000s, topology has become a new paradigm in condensed matter physics. Realization of topology as a generic property of materials has led to numerous predictions of…

材料科学 · 物理学 2022-07-27 Maryam Salehi , Xiong Yao , Seongshik Oh

Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…

介观与纳米尺度物理 · 物理学 2017-02-07 Zhe Luo , Jifa Tian , Mithun Srinivasan , Yong P. Chen , Xianfan Xu

Topological insulators are characterized by a nontrivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we…

材料科学 · 物理学 2011-12-30 Di Xiao , Wenguang Zhu , Ying Ran , Naoto Nagaosa , Satoshi Okamoto

Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…

介观与纳米尺度物理 · 物理学 2010-12-14 Hadar Steinberg , Dillon R. Gardner , Young S. Lee , Pablo Jarillo-Herrero

To magnetize surfaces of topological insulators without damaging their topological feature is a crucial step for the realization of the quantum anomalous Hall effect (QAHE), and still remains as a challenging task. Through density…

介观与纳米尺度物理 · 物理学 2019-06-04 Yusheng Hou , Ruqian Wu

Moir\'e materials have become one of the most active fields in material science in recent years due to their high tunability, and their unique properties emerge from the Moir\'e-scale structure modulation. Here, we propose twisted bilayer…

介观与纳米尺度物理 · 物理学 2022-03-17 Ikuma Tateishi , Motoaki Hirayama

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

材料科学 · 物理学 2015-06-23 J. Barzola-Quiquia , T. Lehmann , M. Stiller , D. Spemann , P. Esquinazi , P. Häussler

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…

介观与纳米尺度物理 · 物理学 2019-06-17 Xiong Yao , Bin Gao , Myung-Geun Han , Deepti Jain , Jisoo Moon , Jae Wook Kim , Yimei Zhu , Sang-Wook Cheong , Seongshik Oh

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of…

Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applications. In this letter, we synthesize the epitaxial Bi2Te3/MnTe…

The topological insulators represent a unique state of matter where the bulk is insulating with an energy gap while the surface is metallic with a Dirac cone protected by the time reversal symmetry. These characteristics provide a venue to…

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…

介观与纳米尺度物理 · 物理学 2021-04-29 Yuxin Liu , Xuefan Niu , Rencong Zhang , Qinghua Zhang , Jing Teng , Yongqing Li

We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin…

介观与纳米尺度物理 · 物理学 2013-07-30 C. J. Lin , X. Y. He , J. Liao , X. X. Wang , V. Sacksteder , W. M. Yang , T. Guan , Q. M. Zhang , L. Gu , G. Y. Zhang , C. G. Zeng , X. Dai , K. H. Wu , Y. Q. Li