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相关论文: Point contacts in encapsulated graphene

200 篇论文

Zigzag edges of graphene have long been predicted to exhibit magnetic electronic state near the Fermi level, which can cause spin-related phenomena and offer unique potentials for graphene-based spintronics. However, the magnetic conduction…

Recently hybridized monolayers consisting of hexagonal boron nitride (h-BN) phases inside graphene layer have been synthesized and shown to be an effective way of opening band gap in graphene monolayers [1]. In this letter, we report an ab…

材料科学 · 物理学 2012-04-27 Qing Peng , Amir R. Zamiri , Wei Ji , Suvranu De

By investigating the optoelectronic properties of prototypical graphene/hexagonal boron nitride (h-BN) heterostructures, we demonstrate how a nanostructured combination of these materials can lead to a dramatic enhancement of light-matter…

Graphene---hexagonal-boron-nitride---InSb near-field structures are designed and optimized to enhance the output power and energy efficiency of the thermophotovoltaic systems working in the temperature range of common industrial waste heat,…

应用物理 · 物理学 2019-10-23 Rongqian Wang , Jincheng Lu , Jian-Hua Jiang

Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially…

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal…

介观与纳米尺度物理 · 物理学 2011-09-26 Aniruddha Konar , Raj Jana , Tian Fang , Guowang Li , William O'Brien , Debdeep Jena

The chemical activity of ionized hydrogen describes the potency of protons in solution and is used to define the pH with wide-ranging applications in biological and materials sciences. Measuring pH with graphene field-effect transistors…

应用物理 · 物理学 2022-10-26 Nicholas E. Fuhr , Mohamed Azize , David J. Bishop

We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a…

We present electronic transport measurements of single- and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm^2/V/s at 4.2 K. The…

介观与纳米尺度物理 · 物理学 2015-05-30 P. J. Zomer , S. P. Dash , N. Tombros , B. J. van Wees

This paper presents for the first time the exact structures at the atomic level of two important nanomaterials, boron nitride and coronene. Both these compounds are hexagonal layer structures similar to graphene in two dimensions and to…

综合物理 · 物理学 2011-12-20 Raji Heyrovska

The interaction between graphene and hexagonal boron nitride (hBN) plays a pivotal role in determining the electronic and structural properties of graphene-based devices. In this work, we employ quantum Monte Carlo (QMC) to study the…

Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their…

介观与纳米尺度物理 · 物理学 2019-03-28 Pedro C. Feijoo , Francisco Pasadas , José M. Iglesias , El Mokhtar Hamham , Raúl Rengel , David Jiménez

Due to atomically thin structure, graphene/hexagonal boron nitride (G/hBN) heterostructures are intensively sensitive to the external mechanical forces and deformations being applied to their lattice structure. In particular, strain can…

介观与纳米尺度物理 · 物理学 2018-12-03 Zahra Khatibi , Afshin Namiranian , S. F. K. S. Panahi

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for…

材料科学 · 物理学 2011-11-11 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Zhicheng Zhong , Paul J. Kelly

The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser…

Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000 $\rm \mu m$. We show…

Low frequency 1/f noise is investigated in graphene, encapsulated between hexagonal boron nitride (hBN) substrate in dual gated geometry. The overall noise magnitude is smaller as compared to graphene on Si/SiO2 substrate. The noise…

介观与纳米尺度物理 · 物理学 2021-12-15 Chandan Kumar , Anindya Das

We perform extensive first-principles calculations for heterostructures composed of monolayer graphene and hexagonal boron nitride (hBN). Employing a symmetry-derived minimal tight-binding model, we extract orbital and spin-orbit coupling…

介观与纳米尺度物理 · 物理学 2019-03-29 Klaus Zollner , Martin Gmitra , Jaroslav Fabian

We theoretically investigate the electronic structures of moir\'{e} superlattices arising in monolayer / bilayer graphene stacked on hexagonal boron nitride (hBN) in presence and absence of magnetic field. We develop an effective continuum…

介观与纳米尺度物理 · 物理学 2014-10-10 Pilkyung Moon , Mikito Koshino

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy…

介观与纳米尺度物理 · 物理学 2013-08-16 S. Engels , A. Epping , C. Volk , S. Korte , B. Voigtländer , K. Watanabe , T. Taniguchi , S. Trellenkamp , C. Stampfer