相关论文: Controlling photon emission from silicon for photo…
Silicon has been long known as a poor light emitter due to its indirect band gap and strong phonon-assisted decay of the excited states. Nevertheless, we have revealed efficient quasi-monochromatic photoluminescence at 368 nm from bulk…
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing…
The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and…
Reducing the intrinsic emittance of photocathodes is one of the most promising routes to improving the brightness of electron sources. However, when emittance growth occurs during beam transport (for example, due to space-charge), it is…
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it…
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect…
The ability to distribute quantum entanglement over long distances is a vital ingredient for quantum technologies. Single atoms and atom-like defects in solids are ideal quantum light sources and quantum memories to store entanglement.…
CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in…
The enhancement of Er$^{3+}$-based up-conversion for photovoltaics in multilayer porous silicon photonic structures is considered theoretically and experimentally. Transfer matrix simulations are used to assess the increased photonic…
Flat TiO$_2$ layers are deposited by magnetron sputtering on Ti/Si wafers. The TiO$_2$ surfaces are then sputter-coated with thin Au films of a nominal thickness of 0.5-10 nm that are converted by solid-state dewetting into Au nanoparticles…
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its…
The integration of 2D nanomaterials with silicon is expected to enrich the applications of 2D functional nanomaterials and to pave the way for next-generation, nanoscale optoelectronics with enhanced performances. Herein, a strategy for…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…
Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers. We investigate the T centre, a telecommunications-band emitter in silicon, and find a strong isotope…
Employing the invariant embedding principle for the electron backscattering function, we present a scheme for constructing an electron surface scattering kernel to be used in the boundary condition for the electron Boltzmann equation of a…
Photoluminescence (PL) spectra of zinc oxide (ZnO) samples with different hydrogen peroxide (H2O2) treatment durations were measured to examine several point defects on the surface of the films. These results suggest successful oxidation…
An efficient silicon based light source presents an unreached goal in the field of photonics, due to Silicons indirect electronic band structure preventing direct carrier recombination and subsequent photon emission. Here we utilize…