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Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…

材料科学 · 物理学 2016-09-28 L. J. Martínez , T. Pelini , V. Waselowski , J. R. Maze , B. Gil , G. Cassabois , V. Jacques

We present electronic transport measurements through short and narrow (30x30 nm) single layer graphene constrictions on a hexagonal boron nitride substrate. While the general observation of Coulomb-blockade is compatible with earlier work,…

介观与纳米尺度物理 · 物理学 2015-01-30 Dominik Bischoff , Florian Libisch , Joachim Burgdörfer , Thomas Ihn , Klaus Ensslin

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the…

介观与纳米尺度物理 · 物理学 2013-10-31 Gwanghyun Ahn , Hye Ri Kim , Taeg Yeoung Ko , Kyoungjun Choi , Kenji Watanabe , Takashi Taniguchi , Byung Hee Hong , Sunmin Ryu

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field…

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for…

材料科学 · 物理学 2011-11-11 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Zhicheng Zhong , Paul J. Kelly

The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials against contamination and degradation. It is often assumed that…

材料科学 · 物理学 2019-06-18 Xu Han , Jiangxiazi Lin , Junwei Liu , Ning Wang , Ding Pan

In this manuscript we study luminescence of hexagonal boron nitride (hBN) by means of non-equilibrium Green's functions plus time-dependent perturbation theory. We derive a formula for light emission in solids in the limit of a weak…

材料科学 · 物理学 2019-02-13 E. Cannuccia , B. Monserrat , C. Attaccalite

The recent observed anomalous Hall effect in magic angle twisted bilayer graphene (TBG) aligned to hexagonal boron nitride (hBN) and unconventional ferroelectricity in Bernal bilayer graphene sandwiched by hBN present a new platform to tune…

介观与纳米尺度物理 · 物理学 2024-02-01 Min Long , Zhen Zhan , Pierre A. Pantaleón , Jose Ángel Silva-Guillén , Francisco Guinea , Shengjun Yuan

Stacking mismatches in hexagonal boron nitride (h-BN) nanostructures affect their photonic, mechanical, and thermal properties. To access information about the stacked configuration of layered ensembles, highly sophisticated techniques like…

材料科学 · 物理学 2021-03-03 Luigi Cigarini , Michal Novotný , František Karlický

Carbon (C) doped hexagonal boron nitride (hBN) has been experimentally reported to be ferromagnetic at room temperature. Substitution by C in hBN has been also reported to form islands of graphene. In this work we derive a mechanistic…

介观与纳米尺度物理 · 物理学 2019-03-13 Rita Maji , Joydeep Bhattacharjee

Effects of antidot lattices on electronic structures of graphene and hexagonal BN (h-BN) are investigated using the first principles method based on density functional theory. For graphene, we find that when the antidot lattice is along the…

材料科学 · 物理学 2013-11-27 Aihua Zhang , Hao Fatt Teoh , Zhenxiang Dai , Yuan Ping Feng , Chun Zhang

When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moir\'e pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moir\'e stacking may offer…

介观与纳米尺度物理 · 物理学 2023-02-14 Robin Smeyers , Lucian Covaci , Milorad V. Milošević

We introduce an interatomic potential for hexagonal boron nitride (hBN) based on the Gaussian approximation potential (GAP) machine learning methodology. The potential is based on a training set of configurations collected from density…

材料科学 · 物理学 2020-10-06 Fabian L. Thiemann , Patrick Rowe , Erich A. Müller , Angelos Michaelides

Using density functional theory, we study proton permeation through graphene and hexagonal boron nitride. We consider several factors influencing the barriers for permeation, including structural optimization, the role of the solvent,…

介观与纳米尺度物理 · 物理学 2017-02-14 J. M. H. Kroes , A. Fasolino , M. I. Katsnelson

Hexagonal boron nitride (hBN) flakes are key building blocks for encapsulating two-dimensional (2D) materials, providing atomically flat surfaces and an excellent dielectric environment for high-mobility field-effect transistors and…

介观与纳米尺度物理 · 物理学 2026-02-26 Isaac Soltero , James G. McHugh , Vladimir I. Fal'ko

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for many applications in photonics. Although its linear and nonlinear optical properties have been extensively studied, its interaction with…

Increased power density in modern microelectronics has led to thermal management challenges which can cause degradation in performance and reliability. In many high-power electronic devices, the power consumption and heat removal are…

介观与纳米尺度物理 · 物理学 2019-10-01 David B. Brown , Thomas L. Bougher , Xiang Zhang , Pulickel Ajayan , Baratunde A. Cola , Satish Kumar

We report on the UV laser induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation of the surface under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence…

Hexagonal boron nitride is an emerging two-dimensional material with far-reaching applications in fields like nanophotonics or nanomechanics. Its layered architecture plays a key role for new materials such as Van der Waals…

量子物理 · 物理学 2022-02-01 Alexander Kubanek

Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high-quality hBN with controlled atomic configurations…

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