相关论文: Metallic behaviour in SOI quantum wells with stron…

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…

We develop a theory for optical Faraday rotation noise in two-dimensional Dirac materials. In contrast to spin noise in conventional semiconductors, we find that the Faraday rotation fluctuations are influenced not only by spins but also…

We study the emergence of interfacial modes between the two regions of a semi-Dirac type material, which are illuminated by the left and right circularly polarized light, respectively. We show that a smooth boundary between the two regions…

Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which…

Monolayer transition metal dichalcogenides offer the possibility of optical control of the valley degree of freedom. In order to asses the potential of these materials in applications, detailed knowledge of the valley dynamics is essential.…

The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…

We report on scattering induced valley polarization enhancement in monolayer molybdenum disulfide. With thermally activated and charge doping introduced scattering, our sample exhibits seven? and twelve-folds of improvements respectively.…

We study a mixture of two light spin-1/2 fermionic atoms and two heavy atoms %in a Mott state in a double well potential. Inelastic scattering processes between both atomic species excite the heavy atoms and renormalize the tunneling rate…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

In monolayer transition metal dichalcogenide semiconductors, valley coherence degrades rapidly due to a combination of fast scattering and inter-valley exchange interaction. This leads to a sub-picosecond valley coherence time, making…

The Letter reports an experimental observation of the classical version of valley polarized states in a two-dimensional hexagonal sonic crystal, where the inversion-symmetry breaking of scatterers induces an omnidirectional frequency gap.…

Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose…

Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV…

The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…

High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this…

X-ray measurements reveal a crystalline monolayer at the surface of the eutectic liquid Au_{82}Si_{18}, at temperatures above the alloy's melting point. Surface-induced atomic layering, the hallmark of liquid metals, is also found below the…

Localization of charge carriers in monolayers (MLs) of transition metal dichalcogenides (TMDs) dramatically increases spin and valley coherence times, and, by analogy with other systems, the role of the hyperfine interaction should enhance.…

Using a combination of ground state quantum Monte-Carlo and finite size scaling techniques, we perform a systematic study of the effect of Coulomb interaction on the localisation length of a disordered two-dimensional electron gas. We find…

We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in…

Valley, as a new degree of freedom, raises the valleytronics in fundamental and applied science. The elastic analogs of valley states have been proposed by mimicking the symmetrical structure of either two-dimensional materials or photonic…