相关论文: Metallic behaviour in SOI quantum wells with stron…
The superconductor-insulator transition in two dimensions has been widely investigated as a paradigmatic quantum phase transition. The topic remains controversial, however, because many experiments exhibit a metallic regime with saturating…
We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
In strongly correlated quantum materials, electrons behave in ways that often extend beyond the confines of conventional Fermi-liquid theory. Interesting results include the observation of low-temperature metallic behavior in systems that…
Two-dimensional (2D) half-metallic materials are of great interest for their promising applications in spintronics. Although numerous of 2D half-metals have been proposed theoretically, rarely of them can be synthesized experimentally.…
We study molecular beam epitaxially grown, undoped Al$_{x}$Ga$_{1-x}$Sb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highest mobilities were achieved with Al$_{0.33}$Ga$_{0.67}$Sb…
The search for topological systems has recently broadened to include random substitutional alloys, which lack the specific crystalline symmetries that protect topological phases, raising the question whether topological properties can be…
We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…
We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a…
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires…
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the…
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a…
We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge…
We report the detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity, spin and valley susceptibilities. We explain qualitatively the…
The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin)…
NO scattering from metallic and insulating surfaces represent contrasting benchmark systems for understanding energy transfer at gas-surface interface. Strikingly different behaviors of highly vibrationally excited NO scattered from Au(111)…
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing…
The strategy of band convergence of multi-valley conduction bands or multi-peak valence bands has been widely used to search or improve thermoelectric materials. However, the phonon-assisted intervalley scatterings due to multiple band…