相关论文: Mode selection in InAs quantum dot microdisk laser…
We report on miniature GaAs disk optomechanical resonators vibrating in air in the radiofrequency range. The flexural modes of the disks are studied by scanning electron microscopy and optical interferometry, and correctly modeled with the…
Through the utilization of index-matched GaAs immersion lens techniques we demonstrate a record extinction (12%) of a far-field focused laser by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time…
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…
We explore similarities between the quantum wells and quantum dots used as optical gain media in semiconductor lasers. We formulate a mapping procedure which allows a simpler, often analytical, description of quantum well lasers to study…
The linewidth of an atom laser can be limited by excitation of higher energy modes in the source Bose-Einstein condensate, energy shifts in that condensate due to the atomic interactions, or phase diffusion of the lasing mode due to those…
We investigate the feasibility of activating coherent mechanical oscillations in lasing microspheres by modulating the laser emission at a mechanical eigenfrequency. To this aim, 1.5% Nd3+:Barium-Titanium-Silicate microspheres with…
The local interaction of charges and light in organic solids is the basis of distinct and fundamental effects. We here observe, at the single molecule scale, how a focused laser beam can locally shift by hundreds-time their natural…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum…
The creation of nitrogen-vacancy centres in diamond is nowadays well controlled using nitrogen implantation and annealing. Although the high-resolution placement of NV centres has been demonstrated using either collimation through pierced…
In laser-driven wakefield, ionization induced injection is an efficient way to inject electrons in the plasma wave. A detailed study on the beam dynamics under the influence of beam loading effects, which can be controlled by the…
A common approach to reduce the linewidth of a laser is an increase of its resonator length. In large gas lasers, however, the frequency spacing between longitudinal modes of the resonator easily becomes significantly smaller than the…
A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving…
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for…
We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown…
Laser-driven ion accelerators have the advantages of compact size, high density, and short bunch duration over conventional accelerators. Nevertheless, it is still challenging to simultaneously enhance the yield and quality of laser-driven…
We introduce a novel in-situ strong field ionization tomography approach for characterizing the spatial density distribution of gas jets. We show that for typical intensities in high harmonic generation experiments, the strong field…
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were…
We illustrate ion-beam engineering of MoO3 Ag Au multilayer plasmonic substrates to improve SERS performance, We illustrate ion-beam engineering of MoO3-Ag-Au multilayer plasmonic substrates to improve SERS performance. Orthorhombic…
Focused-ion-beam machining is a powerful process to fabricate complex nanostructures, often through a sacrificial mask that enables milling beyond the resolution limit of the ion beam. However, current understanding of this super-resolution…