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The thermal expansion of the wide band gap semiconductor MgSiN$_{2}$ has been determined using density functional calculations in combination with the quasi-harmonic approximation. We find that the thermal expansion is rather small in good…

材料科学 · 物理学 2018-03-14 Mikael Råsander , Michelle A. Moram

Flexoelectricity, an electromechanical coupling between strain gradient and polarization, offers a promising dimension to enrich silicon-based devices. Although the flexoelectricity of silicon is known, some fundamental aspects remain…

材料科学 · 物理学 2025-06-26 Lingtong Lv , Qianqian Ma , Kailu Wang , Xin Wen , Shengping Shen

We have performed high-resolution powder x-ray diffraction measurements on a sample of $^{242}$PuCoGa$_{5}$, the heavy-fermion superconductor with the highest critical temperature $T_{c}$ = 18.7 K. The results show that the tetragonal…

We describe a result coming from an experiment based on an Al-Mg alloy (~ 5% Mg) suspended bar hit by an electron beam and operated above and below the termperature of transition from superconducting to normal state of the material. The…

We report new measurements of the thermal expansion and thermo-optic coefficients of RbTiOPO$_4$ (RTP) and KTiOPO$_4$ (KTP) crystals over the temperature range 300-350 K. For RTP/KTP our coefficients of linear thermal expansion at 305 K…

光学 · 物理学 2016-07-15 Arlee V. Smith , Jesse J. Smith , Binh T. Do

In this paper we present the single crystal growth of Fe0.95Se0.6Te0.4 high TC superconducting sample by the modified Bridgman technique. The x-ray diffraction pattern shows the single crystal nature of the sample, as only (00l) peaks are…

超导电性 · 物理学 2019-07-23 Anmol Shukla , Vishal K. Maurya , Rajendra S. Dhaka

During electrostatic bonding, also known as anodic bonding, silicon is bonded to glass by applying an external voltage and simultaneous heating to temperatures of 200...450 $\deg$C. While cooling to working temperature after bonding…

材料科学 · 物理学 2018-02-08 Leonid S. Sinev

We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…

凝聚态物理 · 物理学 2009-10-28 Whitney Mason , S. V. Kravchenko , G. E. Bowker , J. E. Furneaux

Recent reported very high thermal conductivities in the cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully…

Proceeding from the model of a two-dimensional elastic continuum, we describe the characteristic features of thermal expansion of graphene using an approach that goes beyond the quasi-harmonic approximation. The negative value of the…

介观与纳米尺度物理 · 物理学 2018-01-24 Viktor N. Bondarev , Vadym Adamyan , Volodymyr V. Zavalniuk

The thermal expansion coefficients of $\mathrm{Na}_{N}$ clusters with $8 \le N \le 40$ and $\mathrm{Al}_{7}$, $\mathrm{Al}_{13}^-$ and $\mathrm{Al}_{14}^-$ are obtained from {\it ab initio} Born-Oppenheimer LDA molecular dynamics. Thermal…

原子与分子团簇 · 物理学 2009-11-06 S. Kümmel , J. Akola , M. Manninen

We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on…

介观与纳米尺度物理 · 物理学 2015-06-25 Olivier Bourgeois , T. Fournier , J. Chaussy

We have investigated the temperature dependence of the linear thermal expansion along the hexagonal c axis ($\Delta L$), in-plane resistivity ($\rho$), and specific heat ($C_p$) of the topological insulator Sb$_2$Te$_3$ single crystal.…

强关联电子 · 物理学 2012-07-03 P. Dutta , D. Bhoi , A. Midya , N. Khan , P. Mandal , S. Shanmukharao Samatham , V. Ganesan

Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important…

光学 · 物理学 2009-11-11 Bradley J. Frey , Douglas B. Leviton , Timothy J. Madison

The temperature dependence of the linear thermal expansion coefficients (LTEC) of a single crystal of a-(BEDT-TTF)2NH4Hg(SCN)4 where BEDT-TTF is bis(ethylenedithio)tetrathiafulvalene was studied by the method of precision capacitive…

We present thermal expansion and longitudinal magnetostriction data for cubic RAl3 (R = Tm, Yb, Lu) single crystals. The thermal expansion coefficient for YbAl3 is consistent with an intermediate valence of the Yb ion, whereas the data for…

其他凝聚态物理 · 物理学 2015-05-13 S L Bud'ko , J C Frederick , E D Mun , P C Canfield , G M Schmiedeshoff

We have investigated the temperature dependence of the crystal structure of quasi-one-dimensional monoclinic BaIrO$_3$ using X-ray diffraction. Diffraction patterns were measured across a temperature range from 13 K to 300 K, with 5-degree…

材料科学 · 物理学 2025-11-07 Jeong Jinwon , Chang Bin , Noh Han-Jin , Lee Seongsu

By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by…

介观与纳米尺度物理 · 物理学 2015-01-16 Zhe Cheng , Zaoli Xu , Shen Xu , Xinwei Wang

Extensive Monte Carlo simulations are carried out to study thermal stability of an infinite standalone silicon sheet. We used the Tersoff potential that has been used with success for silicon at low temperatures. However, the melting…

材料科学 · 物理学 2015-06-17 Virgile Bocchetti , Hung T. Diep , H. Enriquez , H. Oughaddou , A. Kara

Thermal variation of structural property, linear thermal expansion coefficient, resistivity, thermopower and power factor of polycrystalline Bi1-xSbx (x=0.10, 0.14) samples are reported. Temperature-dependent powder diffraction experiments…

材料科学 · 物理学 2013-12-16 K. Malik , Diptasikha Das , S. Bandyopadhyay , P. Mandal , A. K. Deb , Velaga Srihari , Aritra Banerjee