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相关论文: Anderson localization effects near the Mott metal-…

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The physics of the metal-insulator coexistence region near the non-zero temperature Mott transition is investigated in presence of weak disorder. We demonstrate that disorder reduces the temperature extent and the general size of the…

强关联电子 · 物理学 2007-05-23 M. C. O. Aguiar , V. Dobrosavljevic , E. Abrahams , G. Kotliar

We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…

强关联电子 · 物理学 2021-06-24 Nathan Giovanni , Marcello Civelli , Maria C. O. Aguiar

We present a theory for disordered interacting electrons that can describe both the Mott and the Anderson transition in the respective limits of zero disorder and zero interaction. We use it to investigate the T=0 Mott-Anderson transition…

强关联电子 · 物理学 2009-10-28 V. Dobrosavljevic , G. Kotliar

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

强关联电子 · 物理学 2021-10-04 G. A. Canella , V. V. França

The phase diagram of correlated, disordered electrons is calculated within dynamical mean--field theory using the geometrically averaged (''typical'') local density of states. Correlated metal, Mott insulator and Anderson insulator phases,…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

Density of states, dynamic (optical) conductivity and phase diagram of strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT+\Sigma…

强关联电子 · 物理学 2009-11-13 E. Z. Kuchinskii , I. A. Nekrasov , M. V. Sadovskii

We present a review of theoretical and experimental works on the problem of mutual interplay of Anderson localization and superconductivity in strongly disordered systems. We start with brief discussion of modern aspects of localization…

无序系统与神经网络 · 物理学 2008-02-03 M. V. Sadovskii

Several new aspects of the subtle interplay between electronic correlations and disorder are reviewed. First, the dynamical mean-field theory (DMFT)together with the geometrically averaged ("typical") local density of states is employed to…

强关联电子 · 物理学 2015-05-18 K. Byczuk , W. Hofstetter , U. Yu , D. Vollhardt

We investigate the Mott-Anderson physics in interacting disordered one-dimensional chains through the average single-site entanglement quantified by the linear entropy, which is obtained via density-functional theory calculations. We show…

强关联电子 · 物理学 2022-05-25 G. A. Canella , K. Zawadzki , V. V. França

We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density…

凝聚态物理 · 物理学 2007-05-23 Eugene Kogan , Mark Auslender

We review our recent results on Anderson localization in systems of two interacting particles coupled by contact interactions. Based on an exact mapping to an effective single-particle problem, we numerically investigate the occurrence of…

无序系统与神经网络 · 物理学 2021-01-25 Filippo Stellin , Giuliano Orso

The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal-insulator transition (MIT). Theories separately describing each of these mechanisms were discussed long ago, but…

强关联电子 · 物理学 2015-05-18 V. Dobrosavljevic

We review recent progress in our theoretical understanding of strongly correlated fermion systems in the presence of disorder. Results were obtained by the application of a powerful nonperturbative approach, the Dynamical Mean-Field Theory…

强关联电子 · 物理学 2015-05-18 K. Byczuk , W. Hofstetter , D. Vollhardt

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron…

材料科学 · 物理学 2015-06-04 Yosuke Harashima , Keith Slevin

We investigate quantum phase transitions in the extended periodic Anderson model, which includes electron correlations within and between itinerant and localized bands. We calculate zero and finite temperature properties of the system using…

强关联电子 · 物理学 2009-11-13 Akihisa Koga , Norio Kawakami , Robert Peters , Thomas Pruschke

We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) -…

强关联电子 · 物理学 2009-04-16 M. C. O. Aguiar , V. Dobrosavljevic , E. Abrahams , G. Kotliar

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

Interacting fermions in the presence of disorder pose one of the most challenging problems in condensed matter physics, primarily due to the absence of accurate numerical tools. Our investigation delves into the intricate interplay between…

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

The role of Coulomb disorder is analysed in the Anderson-Falicov-Kimball model. Phase diagrams of correlated and disordered electron systems are calculated within dynamical mean-field theory applied to the Bethe lattice, in which…

强关联电子 · 物理学 2016-03-14 Rubens D. B. Carvalho , Guilherme M. A. Almeida , Andre M. C. Souza
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