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相关论文: From Silicene to Half-Silicane by Hydrogenation

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Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is…

While graphene is a semi-metal, a recently synthesized hydrogenated graphene called graphane, is an insulator. We have probed the transformation of graphene upon hydrogenation to graphane within the framework of density functional theory.…

介观与纳米尺度物理 · 物理学 2012-10-05 Prachi Chandrachud , Bhalchandra S Pujari , Soumyajyoti Haldar , Biplab Sanyal , D G Kanhere

We measure the adsorption height of hydrogen-intercalated quasi-free-standing monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full…

The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation…

材料科学 · 物理学 2023-05-03 Luxmi , N. Srivastava , R. M. Feenstra , P. J. Fisher

Free standing silicene is predicted to display comparable electronic properties as graphene. However, the yet synthesized silicene-like structures have been only realized on different substrates which turned out to exhibit versatile…

材料科学 · 物理学 2015-06-18 G. R. Berdiyorov , M. Neek-Amal , F. M. Peeters , Adri C. T. van Duin

We report here the structural and electronic properties of graphene and silicene (silicon analogue of graphene) investigated using first-principles calculations of their ground state energies employing full-potential (linearized) augmented…

介观与纳米尺度物理 · 物理学 2015-06-03 Harihar Behera , Gautam Mukhopadhyay

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However,…

Hydrogenation has proven to be an effective tool to open the bandgap of graphene. In the present density functional study we demonstrate that single-side-hydrogenated graphene is a semiconductor with an indirect bandgap of 1.89 eV, in…

材料科学 · 物理学 2011-03-01 Bhalchandra S. Pujari , Sergey Gusarov , Michael Brett , Andriy Kovalenko

It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the forming of 2HG-SL drastically changes the electronic properties of…

材料科学 · 物理学 2009-11-13 Leonid A. Chernozatonskii , Pavel B. Sorokin , Jochen W. Bruning

The paper presents the first computational experiment on the transformation of a graphene sheet (graphene molecule Cn) into graphane (CH)n of regular chairlike structure. The transformation is considered as stepwise hydrogenation of the…

材料科学 · 物理学 2011-12-25 E. F. Sheka , N. A. Popova

Hydrogenation of graphene on the \alpha-quartz (0001) SiO_2 substrate is studied, considering different surface terminations in order to take into account the amorphic nature of the material. Our ab initio calculations show that the…

介观与纳米尺度物理 · 物理学 2012-01-16 P. Havu , M. Ijäs , A. Harju

Silicene, the two-dimensional allotrope of silicon, is predicted to exist in a low-buckled honeycomb lattice, characterized by semimetallic electronic bands with graphenelike energy-momentum dispersions around the Fermi level (represented…

We present first-principles calculations of silicene/graphene and germanene/graphene bilayers. Various supercell models are constructed in the calculations in order to reduce the strain of the lattice-mismatched bilayer systems. Our…

介观与纳米尺度物理 · 物理学 2013-12-10 Yongmao Cai , Chih-Piao Chuu , C. M. Wei , M. Y. Chou

We address the stability of the surface phases that occur on the C-side of 3C-SiC($\bar{1} \bar{1} \bar{1}$) at the onset of graphene formation. In this growth range, experimental reports reveal a coexistence of several surface phases. This…

材料科学 · 物理学 2015-05-20 Lydia Nemec , Florian Lazarevic , Patrick Rinke , Matthias Scheffler , Volker Blum

In this paper, using the same geometrical approach than for the (2R3x2R3) R30{\deg} structure (H. Jamgotchian et al., 2015, Journal of Physics. Condensed Matter 27 395002), for the (R13xR13)R13.9{\deg} type II structure, we propose an…

材料科学 · 物理学 2016-05-25 H. Jamgotchian , B. Ealet , H. Maradj , J. -Y. Hoarau , J. -P. Biberian , B. Aufray

Hydrogenated graphene, graphane, is studied on oxygen-terminated silicon dioxide substrate using ab initio calculations. A structure with hydrogenation only on one side of the graphene layer is found stable and its hydrogen configurations…

介观与纳米尺度物理 · 物理学 2011-07-13 M. Ijäs , P. Havu , A. Harju , P. Pasanen

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated…

材料科学 · 物理学 2011-10-03 F. Speck , J. Jobst , F. Fromm , M. Ostler , D. Waldmann , M. Hundhausen , H. B. Weber , Th. Seyller

Silicene is a one-atom-thick 2D crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene,…

材料科学 · 物理学 2013-10-31 Wei-Feng Tsai , Cheng-Yi Huang , Tay-Rong Chang , Hsin Lin , Horng-Tay Jeng , A. Bansil

Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are…

材料科学 · 物理学 2009-12-11 C. Riedl , C. Coletti , T. Iwasaki , A. A. Zakharov , U. Starke

Graphane is a two-dimensional system consisting of a single planar layer of fully saturated (sp$^3$ hybridization) carbon atoms with H atoms attached to them in an alternating pattern (up and down with relation to the plane defined by the…

材料科学 · 物理学 2009-03-03 Sergio B. Legoas , Pedro A. S. Autreto , Marcelo Z. S. Flores , Douglas S. Galvao