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相关论文: Selective Interface Control of Order Parameters in…

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Soft x-ray resonant scattering at the Ni L2,3 edges is used to test models of magnetic and orbital-ordering below the metal-insulator transition in NdNiO3. The large branching ratio of the L3 to L2 intensities of the (1/2,0,1/2) reflection…

强关联电子 · 物理学 2009-11-11 V. Scagnoli , U. Staub , A. M. Mulders , M. Janousch , G. I. Meijer , G. Hammerl , J. M. Tonnerre , N. Stojic

Motivated by the direct observation of electronic phase separation in first-order Mott transitions, we model the interface between the thermodynamically coexisting metal and Mott insulator. We show how to model the required slab geometry…

强关联电子 · 物理学 2017-05-24 Juho Lee , Chuck-Hou Yee

The microscopic mechanism of the hydrogen-induced metal-insulator transition in SmNiO$_3$ is clarified by means of density-functional theory with the Hubbard U correction. While 100% of hydrogen doping per Ni atom has been supposed to be…

强关联电子 · 物理学 2022-10-17 Kunihiko Yamauchi , Ikutaro Hamada

The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer the interface physics through the growth of atomically…

Disorder can have a dominating influence on correlated and quantum materials leading to novel behaviors which have no clean limit counterparts. In magnetic systems, spin and exchange disorder can provide access to quantum criticality,…

Spin correlations in metallic and insulating phases of $V_2O_3$ and its derivatives are investigated using magnetic neutron scattering. Metallic samples have incommensurate spin correlations varying little with hole doping. Paramagnetic…

强关联电子 · 物理学 2009-10-28 Wei Bao , C. Broholm , G. Aeppli , P. Dai , J. M. Honig , P. Metcalf

Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO3/SrTiO3, two dimensional conductive states form to avoid the polar discontinuity and magnetic…

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited…

We study the electronic structure, magnetic state, and phase stability of paramagnetic BiNiO$_3$ near a pressure-induced Mott insulator-to-metal transition (MIT) by employing a combination of density functional and dynamical mean-field…

强关联电子 · 物理学 2019-11-06 I. Leonov , A. S. Belozerov , S. L. Skornyakov

Density order is usually a consequence of the competition between long-range and short-range interactions. Here we report a density ordered superfluid emergent from a homogeneous Mott insulator due to the competition between frustrations…

量子气体 · 物理学 2021-12-22 Ce Wang , Yu Chen

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order…

We consider superconductivity in a system with $N$ Fermi surfaces, including intraband and interband effective electron-electron interactions. The effective interaction is described by an $N \times N$ matrix whose elements are assumed to be…

超导电性 · 物理学 2023-08-02 Niels Henrik Aase , Christian Svingen Johnsen , Asle Sudbø

Magnetic ordering phenomena have a profound influence on the macroscopic properties of correlated-electron materials, but their realistic prediction remains a formidable challenge. An archetypical example is the ternary nickel oxide system…

We present a group theoretic analysis of several classes of organic superconductors. We argue that highly frustrated half-filled layered organic superconductors, such as kappa-(ET)_2Cu2(CN)_3 (where ET is BEDT-TTF) and…

超导电性 · 物理学 2007-05-23 B. J. Powell

The competition between collective quantum phases in materials with strongly correlated electrons depends sensitively on the dimensionality of the electron system, which is difficult to control by standard solid-state chemistry. We have…

Battery interfaces critically influence lithium-metal battery performance through their role in ion diffusion and dendrite formation. However, structural characterization of these interfaces has remained challenging due to limitations in…

材料科学 · 物理学 2025-05-08 Hyeongjun Koh , Eric Detsi , Eric A. Stach

Magnetism in doped transition metal dichalcogenide monolayers and van der Waals interfaced materials have motivated the search for sustainable magnetic states at the nanoscale with the prospect of building devices for spintronics…

材料科学 · 物理学 2025-08-05 Rohin Sharma , Diem Thi-Xuan Dang , Lilia M. Woods

We construct a simple holographic model incorporating higher-order coupling terms for electron self-interactions. It can exhibit typical behavior of a Mott insulator, including a metal-insulator transition and a decrease in DC conductivity…

强关联电子 · 物理学 2026-02-23 Lin-Yue Bai , René Meyer , Zhen-Hua Zhou

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…