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In 2D materials, the quantum confinement and van der Waals-type interlayer interactions largely govern the fundamental electronic and optical properties, and the dielectric screening plays a dominant role in the excitonic properties. This…

介观与纳米尺度物理 · 物理学 2021-02-19 Guowei Zhang , Shenyang Huang , Fanjie Wang , Hugen Yan

Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…

介观与纳米尺度物理 · 物理学 2017-03-13 Vasudevan Iyer , Peide Ye , Xianfan Xu

Atomically thin NbSe2 is a metallic layered transition metal dichalcogenide (TMD) with considerably different crystallographic structure and electronic properties from other TMDs, such as MoS2, MoSe2, WS2 and WSe2. Properties of TMD atomic…

介观与纳米尺度物理 · 物理学 2016-09-05 Rui He , Jeremiah van Baren , Jia-An Yan , Xiaoxiang Xi , Zhipeng Ye , Gaihua Ye , I-Hsi Lu , S. M. Leong , C. H. Lui

Black Phosphorus (BP) is an excellent material for post graphene era due to its layer dependent band gap, high mobility and high Ion/Ioff. However, its poor stability in ambient poses a great challenge in its practical and long-term usage.…

Black phosphorus (BP) has attracted significant interest as a monolayer or few-layer material with extraordinary electrical and optoelectronic properties. However, degradation in air and other environments is an unresolved issue that may…

The unique optoelectronic properties of black phosphorus (BP) have triggered great interest in its applications in areas not fulfilled by other layered materials (LMs). However, its poor stability (fast degradation, i.e. <<1 h for…

Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP…

材料科学 · 物理学 2014-11-05 Yuchen Du , Han Liu , Yexin Deng , Peide D. Ye

Homogeneous in-plane biaxial tensile strain strengthens the out-of-plane van der Waals interaction in \MoS\ bilayers (BLs) and can be used to fine-tune their terahertz (THz) oscillations. Using ultralow-frequency Raman spectroscopy on…

材料科学 · 物理学 2026-02-13 S. Patel , Jose D. Mella , S. Puri , Salvador Barraza-Lopez , H. Nakamura

We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS2 samples by using room temperature low-frequency micro-Raman spectroscopy. Raman measurements were performed using laser wavelength of 441.6, 514.4, 532 and…

材料科学 · 物理学 2018-07-16 Tharith Sriv , Kangwon Kim , Hyeonsik Cheong

The phonon dispersions of monolayer and few-layer graphene (AB bilayer, ABA and ABC trilayers) are investigated using the density-functional perturbation theory (DFPT). Compared with the monolayer, the optical phonon $E_{2g}$ mode at…

材料科学 · 物理学 2009-11-13 Jia-An Yan , W. Y. Ruan , M. Y. Chou

Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical…

介观与纳米尺度物理 · 物理学 2017-04-21 Bingchen Deng , Vy Tran , Hao Jiang , Cheng Li , Yujun Xie , Qiushi Guo , Xiaomu Wang , He Tian , Han Wang , Judy J. Cha , Qiangfei Xia , Li Yang , Fengnian Xia

The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental…

Black phosphorous (BP), a two-dimensional (2D) material, has a direct bandgap, which fills up the bandgap lacuna left by graphene topological insulators and transition-metal dichalcogenides because of its dependence on the layers and…

Black phosphorene (BP) has emerged as a promising platform for tunable nonlinear photonics due to its layer-dependent bandgap, high carrier mobility, and remarkable in-plane anisotropy. This study investigates the second-harmonic generation…

介观与纳米尺度物理 · 物理学 2025-10-14 Yan Meng , Kainan Chang , Yanyan Qian , Luxia Wang , Jin Luo Cheng

We have investigated the interlayer shear and breathing phonon modes in MoS$_{2}$ with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four…

介观与纳米尺度物理 · 物理学 2019-02-01 Jeremiah van Baren , Gaihua Ye , Jia-An Yan , Zhipeng Ye , Pouyan Rezaie , Peng Yu , Zheng Liu , Rui He , Chun Hung Lui

Two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as key materials for next-generation magneto-electric and spintronic devices, where understanding the relationship between layer number, lattice dynamics, and magnetic…

材料科学 · 物理学 2025-11-18 Nilesh Choudhury , Sandeep , Neesha Yadav , Mayank Shukla , Pintu Das

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently,…

Beyond classical Bragg diffraction, we report on new sub-Bragg phenomena to achieve enhanced sound wave tunability in the low-frequency range in a multilayered acoustic metamaterial system. Remarkably, we reveal and study the formation of…

应用物理 · 物理学 2024-10-03 Majdi O. Gzal , Lawrence A. Bergman , Kathryn H. Matlack , Alexander F. Vakakis

Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as…

Layered materials have huge potential in various applications due to their extraordinary properties. To determine the interlayer interaction (or equivalently the layer spacing under different perturbations) is of critical importance. In…

材料科学 · 物理学 2017-04-14 Y. W. Sun , D. Holec , Y. Xu , D. J. Dunstan