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相关论文: Tuning the electronic structure of Sr2IrO4 thin fi…

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The phase diagram of electron-doped pnictides is studied varying the temperature, electronic density, and isotropic quenched disorder strength by means of computational techniques applied to a three-orbital ($xz$, $yz$, $xy$) spin-fermion…

超导电性 · 物理学 2015-10-28 Shuhua Liang , Christopher B. Bishop , Adriana Moreo , Elbio Dagotto

Hexagonal FeSe thin films were grown on SrTiO3 substrates and the temperature and thickness dependence of their electronic structures were studied. The hexagonal FeSe is found to be metallic and electron doped, whose Fermi surface consists…

强关联电子 · 物理学 2017-10-25 S. Y. Tan , C. H. P. Wen , M. Xia , J. Jiang , Q. Song , B. P. Xie , X. C. Lai , D. L. Feng

The compound Bi14Rh3I9 consists of ionic stacks of intermetallic [(Bi4Rh)3I]2+ and insulating [Bi2I8]2- layers and has been identified to be a weak topological insulator. Scanning tunneling microscopy revealed the robust edge states at all…

The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In…

Over the last years, superconductivity has been discovered in several families of iron-based compounds. Despite intense research, even basic electronic properties of these materials, such as Fermi surfaces, effective electron masses, or…

To minimize their electrostatic energy, insulating ferroelectric films tend to break up into nanoscale ``Kittel'' domains of opposite polarization that are separated by uncharged 180$^\circ$ domain walls. Here, I report on self-consistent…

介观与纳米尺度物理 · 物理学 2022-10-14 W. A. Atkinson

We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band…

材料科学 · 物理学 2014-01-15 J. J. Lee , F. T. Schmitt , R. G. Moore , I. M. Vishik , Y. Ma , Z. X. Shen

The Weyl semimetallic compound Eu2Ir2O7 along with its hole doped derivatives (which is achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic and calorimetric studies. The metal-insulator…

强关联电子 · 物理学 2018-01-17 A. Banerjee , J. Sannigrahi , S. Giri , S. Majumdar

Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at…

Ultra-thin films of the electron doped manganite La$_{0.8}$Ce$_{0.2}$MnO$_3$ were grown in a layer-by-layer growth mode on SrTiO$_3$ (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology was…

强关联电子 · 物理学 2015-06-19 S. Middey , M. Kareev , D. Meyers , X. Liu , Y. Cao , S. Tripathi , P. Ryan , J. W. Freeland , J. Chakhalian

Dimensionality tuning is an important method to modify the electronic states of quantum materials. However, the mechanism of such tuning in heavy fermion systems and its connection with transport properties remain largely unexplored. Here…

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…

Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles…

材料科学 · 物理学 2021-07-28 Anuj Goyal , Andriy Zakutayev , Vladan Stevanović , Stephan Lany

The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity…

强关联电子 · 物理学 2024-05-15 Johannes Mohr , Tyler Hennen , Daniel Bedau , Rainer Waser , Dirk J. Wouters

We have synthesized Fe$_{1+y}$Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected…

We have studied the electronic structure of EuFe2As2-xPx using high resolution angle-resolved photoemission spectroscopy. Upon substituting As with the isovalent P, which leads to a chemical pressure and to superconductivity, we observe a…

Using molecular beam epitaxy (MBE) to grow multi-elemental oxides (MEO) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry…

材料科学 · 物理学 2022-11-08 Gaurab Rimal , Alessandro R. Mazza , Matthew Brahlek , Seongshik Oh

Buried two dimensional electron gasses (2DEGs) have recently attracted considerable attention as a testing ground for both fundamental physics and quantum computation applications. Such 2DEGs can be created by phosphorus delta (\delta)…

材料科学 · 物理学 2013-06-04 Jill A. Miwa , Philip Hofmann , Michelle Y. Simmons , Justin W. Wells

This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by…

Unlike proper ferroelectricity, the improper ferroelectricity in multiferroic rare-earth manganites h-ReMnO3 (Re=La-Lu,Y,Sc) thin films features a unique geometric distortion and stays immune to the depolarizing field in the ultra-thin…

材料科学 · 物理学 2024-08-07 Detian Yang , Yaohua Liu , Xiaoshan Xu