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相关论文: Giant Oscillating Thermopower at Oxide Interfaces

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By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects…

材料科学 · 物理学 2018-06-13 A. E. M. Smink , M. P. Stehno , J. C. de Boer , A. Brinkman , W. G. van der Wiel , H. Hilgenkamp

Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk…

We report measurements and analyses of resistivity, thermopower, and thermal conductivity of polycrystalline samples of perovskite LaRh$_{1-x}$Ni$_x$O$_3$. The thermopower is found to be large at 800 K (185 $\mu$V/K for $x=$0.3), which is…

强关联电子 · 物理学 2009-02-12 S. Shibasaki , Y. Takahashi , I. Terasaki

We demonstrate top-gate tunable Josephson junction like behavior in the two dimensional electron gas at the LaAlO$_3$-SrTiO$_3$ interface. A combination of global back-gating and local top-gating is used to define the junctions, providing…

Using local density approximation (LDA) calculations we predict GdFeO$_3$-like rotation of TiO$_6$ octahedra at the $n$-type interface between LaAlO$_3$ and SrTiO$_3$. The narrowing of the Ti $d$ bandwidth which results means that for very…

材料科学 · 物理学 2008-09-10 Zhicheng Zhong , Paul J. Kelly

We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with…

材料科学 · 物理学 2014-02-04 Z. Q. Liu , L. Sun , Z. Huang , C. J. Li , S. W. Zeng , K. Han , W. M. Lü , T Venkatesan , Ariando

After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3 system, the recent discovery of a superconducting two-dimensional electron gases (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the…

超导电性 · 物理学 2022-08-24 S. Mallik , G. Ménard , G. Saïz , H. Witt , J. Lesueur , A. Gloter , L. Benfatto , M. Bibes , N. Bergeal

We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on…

强关联电子 · 物理学 2019-05-03 I. I. Piyanzina , V. Eyert , Yu. V. Lysogorskiy , D. A. Tayurskii , T. Kopp

We report quantum oscillations in magnetoresistance that are periodic in magnetic field ($B$), observed at the interface between (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_3$ and SrTiO$_3$. Unlike Shubnikov-de Haas oscillations, which…

介观与纳米尺度物理 · 物理学 2026-03-11 Km Rubi , Kun Han , Huang Zhen , Michel Goiran , Duncan K. Maude , Walter Escoffier , A. Ariando

Thermopower and electrical resistivity measurements transverse to the conducting chains of the quasi-one-dimensional metal Li(0.9)Mo(6)O(17) are reported in the temperature range 5 K <= T <= 500 K. For T>= 400 K the interchain transport is…

材料科学 · 物理学 2015-06-19 J. L. Cohn , S. Moshfeghyeganeh , C. A. M. dos Santos , J. J. Neumeier

We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off…

Heterostructures made of transition metal oxides are new tailor-made materials which are attracting much attention. We have constructed a 6-band k.p Hamiltonian and used it within the envelope function method to calculate the subband…

介观与纳米尺度物理 · 物理学 2014-01-09 L. W. van Heeringen , G. A. de Wijs , A. McCollam , J. C. Maan , A. Fasolino

The electronic properties of disordered systems at the Anderson metal-insulator transition (MIT) have been the subject of intense study for several decades. Thermoelectric properties at the MIT, such as thermopower and thermal conductivity,…

介观与纳米尺度物理 · 物理学 2007-05-23 Alexander Croy , Rudolf A. Roemer

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of…

强关联电子 · 物理学 2017-08-29 V. V. Bal , Z. Huang , K. Han , Ariando , T. Venkatesan , V. Chandrasekhar

Many-body interactions in transition-metal oxides give rise to a wide range of functional properties, such as high-temperature superconductivity, colossal magnetoresistance, or multiferroicity. The seminal recent discovery of a…

The electronic properties of the polar interface between insulating oxides is a subject of great current interest. An exciting new development is the observation of robust magnetism at the interface of two non-magnetic materials LaAlO_3…

强关联电子 · 物理学 2013-10-03 Sumilan Banerjee , Onur Erten , Mohit Randeria

First principles calculations reveal that adding a metallic overlayer on LaAlO3/SrTiO3(001) eliminates the electric field within the polar LaAlO3 film and thus suppresses the thickness-dependent insulator-to-metal transition observed in…

材料科学 · 物理学 2012-03-23 V. G. Ruiz López , R. Arras , W. E. Pickett , R. Pentcheva

The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the…

介观与纳米尺度物理 · 物理学 2021-12-14 G. M. Gusev , Z. D. Kvon , A. D. Levin , N. N. Mikhailov

The progress in the fabrication of nanoscale systems based on the two-dimensional electron gas at the interface between LaAlO$_3$ and SrTiO$_3$ (LAO/STO) has created an increased demand for simulations of these nanostructures, which…

介观与纳米尺度物理 · 物理学 2024-11-19 P. Wójcik , R. Citro , B. Szafran

The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in…

超导电性 · 物理学 2012-07-31 Manan Mehta , D. A. Dikin , C. W. Bark , S. Ryu , C. M. Folkman , C. B. Eom , V. Chandrasekhar
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