相关论文: Total ionizing dose effects of domestic SiGe HBTs …

The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…

The ATLAS Inner Tracker (ITk) upgrade for the High-Luminosity LHC (HL-LHC) requires a radiation-tolerant pixel readout chip, which must withstand a total ionising dose (TID) of up to 1 Grad. The readout ASIC for the ITk upgrade has been…

The total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator (SOI) pMOSFETs have been studied by comparing with those of the back transistor of SOI nMOSFETs fabricated on the same wafer. The transistors…

The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities.…

The focal plane of Athena's WFI consists of spectroscopic single photon X-ray detectors that contain arrays of DEPFETs (DEpleted P-channel Field-Effect Transistor) as well as ASICs that are used for steering, readout and analog signal…

We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID…

The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the…

Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total…

Results on the effects of ionizing radiation on the signal produced by plastic scintillating rods manufactured by Eljen Technology company are presented for various matrix materials, dopant concentrations, fluors (EJ-200 and EJ-260),…

Neutron and $\gamma$-ray irradiation damages to transistors are found to be non-additive, and this is denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The recent defect-based model [ACS Appl.…

The dual-channel multi-mode 850 nm optical Miniature Transmitter (MTx) is developed for data transmission of the ATLAS LAr calorimeter readout at LHC. The MTx's are exposed to the radiation field of proton-proton collisions, therefore, the…

We experimentally investigated total ionizing dose (TID) response of the input-stage PNP transitor in an operational amplifier LM324N with various initial displacement damage (IDD). We found that, the damage first decreases and then…

We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures,…

The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be…

The high-temperature ratio (HTR) is a parameter quantifying changes of the shape of the high-temperature part of the LiF:Mg,Ti glow-curve after exposure to densely ionizing radiation. It was introduced in order to estimate the effective LET…

The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…

The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change…

Silicon strip detectors developed for the Inner Tracker (ITk) of the ATLAS experiment will operate in a harsh radiation environment of the HL-LHC accelerator. The ITk is thus designed to endure a total fluence of 1.6E15 1MeV n_eq/cm2 and a…

It is surprising that only an enhanced low-dose-rate sensitivity (ELDRS), but not its contrariety, a reduced low-dose-rate sensitivity (RLDRS), is experimentally observed in bipolar junction transistors. In this work, we attribute this…

We present measurements of the reduction of light output by plastic scintillators irradiated in the CMS detector during the 8 TeV run of the Large Hadron Collider and show that they indicate a strong dose rate effect. The damage for a given…