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相关论文: Bottom-up assembly of metallic germanium

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Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in…

Plasmonics enables deep-subwavelength concentration of light and has become important for fundamental studies as well as real-life applications. Two major existing platforms of plasmonics are metallic nanoparticles and metallic films.…

Two-dimensional (2D) elemental semiconductors have great potential for device applications, but their performance is limited by the lack of efficient doping methods. Here, combining molecular beam epitaxy, scanning tunneling…

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential…

We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the…

Two-dimensional (2D) materials have received considerable attention as possible electrodes in Li-ion batteries (LIBs), although a deeper understanding of the Li adsorption behavior as well as broad screening of the materials space is still…

材料科学 · 物理学 2022-03-22 Sheng Gong , Shuo Wang , Taishan Zhu , Xi Chen , Jeffrey C. Grossman

By using an asymptotic analysis and numerical simulations, we derive and investigate a system of homogenized Maxwell's equations for conducting material sheets that are periodically arranged and embedded in a heterogeneous and anisotropic…

Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…

材料科学 · 物理学 2023-08-23 Quinn T. Campbell , Shashank Misra , Andrew D. Baczewski

Achieving long-term stability in high-capacity lithium-ion battery anodes remains a critical challenge. In this study, we present a materials-intrinsic strategy for extending the cycle life of Ge, a promising next-generation anode material,…

材料科学 · 物理学 2026-05-04 Koki Nozawa , Noriyuki Saitoh , Noriko Yoshizawa , Takashi Suemasu , Kaoru Toko

Two-dimensional polyaniline with a C3N stoichiometry, is a newly fabricated material that has expected to possess fascinating electronic, thermal, mechanical and chemical properties . The possibility of further tuning the C3N properties…

计算物理 · 物理学 2017-08-18 Meysam Makaremi , Bohayra Mortazavi , Chandra Veer Singh

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport…

介观与纳米尺度物理 · 物理学 2011-11-09 T. O. Wehling , K. S. Novoselov , S. V. Morozov , E. E. Vdovin , M. I. Katsnelson , A. K. Geim , A. I. Lichtenstein

Doped free carriers can substantially renormalize electronic self-energy and quasiparticle band gaps of two-dimensional (2D) materials. However, it is still challenging to quantitatively calculate this many-electron effect, particularly at…

介观与纳米尺度物理 · 物理学 2017-12-14 Shiyuan Gao , Li Yang

Characteristics improvement of photon/plasmon detectors have been the subject of several investigations in the area of plasmonic integrated circuits. Among different suggestions, Silicon-based Metal-Semiconductor-Metal (MSM) waveguides are…

应用物理 · 物理学 2019-01-31 Elahe Rastegar Pashaki , Hassan Kaatuzian , Abdolber Mallah Livani

Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential…

介观与纳米尺度物理 · 物理学 2017-04-05 Farzan Gity , Lida Ansari , Martin Lanius , Peter Schüffelgen , Gregor Mussler , Detlev Grützmacher , James C. Greer

Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex…

材料科学 · 物理学 2017-05-10 J. A. Silva-Guillén , E. Canadell , P. Ordejón , F. Guinea , R. Roldán

The thermodynamic, kinetic and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping was found to heighten the diffusion potential barrier, while hole doping lowers it.…

Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…

First-principles calculations based on density functional theory (DFT) have been employed to investigate the structural, electronic, and gas-sensing properties of pure, defected, and doped germanene nanosheets. Our calculations have…

材料科学 · 物理学 2017-07-13 Md Monirojjaman Monshi , Sadegh Mehdi Aghaei , Irene Calizo

The quest to improve transparent conductors balances two key goals: increasing electrical conductivity and increasing optical transparency. To improve both simultaneously is hindered by the physical limitation that good metals with high…

Nano-engineering crystalline materials can be used to tailor their thermal properties. By adding new nanoscale phonon scattering centers and controlling their size, one can effectively decrease the phonon mean free path and hence the…