相关论文: Bottom-up assembly of metallic germanium
The marriage between a two-dimensional layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that would not have been achieved in either material alone. Interesting recent…
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations…
Diatoms have been described as nanometer-born lithographers because of their ability to create sophisticated three-dimensional amorphous silica exoskeletons. The hierarchical architecture of these structures provides diatoms with mechanical…
This PhD tutorial article is a review of our experiments on heteronuclear quantum gas mixtures at the University of Hamburg. We introduce basic properties of trapped Fermi-Bose mixtures and demonstrate the achievement of large quantum…
Transition metal doping is commonly used for altering the properties of solid-state materials to suit applications in science and technology. Partially filled $d$-shells of transition metal atoms lead to electronic states with diverse…
Computational studies of electrochemical interfaces based on density-functional theory (DFT) play an increasingly important role in present research on electrochemical processes for energy conversion and storage. The homogeneous background…
Doped strontium titanate becomes superconducting at a density as low as n = 5 x 10^17 cm^-3, where the Fermi energy is orders of magnitude smaller than the longitudinal-optical-phonon frequencies. In this limit the only optical mode with a…
Combining theory and certain striking phenomenology we suggest that silicene and germanene are \textit{elemental Mott insulators} and abode of doping induced high Tc superconductivity. In our theory, a 3 fold reduction in silicene $\pi -…
2D materials provide a platform for strong light--matter interactions, creating wide-ranging design opportunities via new-material discoveries and new methods for geometrical structuring. We derive general upper bounds to the strength of…
Laser science has tackled physical limitations to achieve higher power, faster and smaller light sources. The quest for ultra-compact laser that can directly generate coherent optical fields at the nano-scale, far beyond the diffraction…
When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…
Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties. Direct substitutions have thus far been limited to incidental Si impurities and P, N and B dopants introduced…
The applications of plasmonics to energy transfer from free-space radiation to molecules are currently limited to the visible region of the electromagnetic spectrum due to the intrinsic optical properties of bulk noble metals that support…
Hybrid quantum devices, incorporating both atoms and photons, can exploit the benefits of both to enable scalable architectures for quantum computing and quantum communication, as well as chip-scale sensors and single-photon sources.…
Metallic nanostructures can support so-called plasma oscillations (plasmons). Plasmons allow for the concentration of the energy from light, down to sizes well below the conventional diffraction limit known from optics. Plasmonics thus…
Using ab-initio calculations, we study the electronic structure of gallium-doped germanium, which was found recently to be a superconductor, with a critical temperature of 0.5 Kelvins, and a particularly low density of Cooper pairs. The…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed,…
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and…
Following a recently manifested guide of how to team up infrared transparency and high electrical conductivity within semimetal materials [C. Cui $et$ $al.$ Prog. Mater. Sci. 2023, 136, 101112], we evaluate an applicability of the calcium…