相关论文: Usage of mechanically switching devices for HV ele…
Robotic legs have bimodal operations: swing phases when the leg needs to move quickly in the air (high-speed, low-force) and stance phases when the leg bears the weight of the system (low-speed, high-force). Sizing a traditional…
We describe five high-voltage (60 to 550V peak to peak), high-speed (1-300ns rise time; 1.3-300MHz bandwidth) linear amplifiers for driving capacitive or resistive loads such as electro-optic modulators. The amplifiers use bipolar…
A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced,…
The KEK 8-GeV electron / 3.5-GeV positron linac has been operated with very different beam specifications for downstream rings, KEKB, PF and PF-AR. For the reliable operation among these beam modes intelligent beam switching and beam…
Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications…
We introduce a compact design for an electronic device capable of superposing 8 bias voltages up to $\pm$96~V on a voltage of up to 5~kV. Such a device has been implemented to provide biasing of a beam steerer-shifter system for use in…
In hyperbolic 2D materials, energy is channeled to their deep subwavelength polaritonic modes via four narrow beams. Here we consider the launching of surface polaritons in the hyperbolic 2D materials and demonstrate that efficient…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…
A family of interleaved current-fed high step-up dc-dc converters are introduced and analyzed here by combining a voltage multiplier (VM) and an active clamp circuit for high-voltage high-power applications. Low input currents and output…
By introducing a Higgs-Dilaton potential, the 2T model has a trigger for a first order electroweak phase transition, namely for the mass of Dilaton between $300 $ GeV and $550$ GeV. We have also compared the transition strengths in the case…
Modern-day computers use electrical signaling for processing and storing data which is bandwidth limited and power-hungry. These limitations are bypassed in the field of communications, where optical signaling is the norm. To exploit…
An electron beam is deflected when it passes over a silicon nitride surface, if the surface is illuminated by a low-power continuous-wave diode laser. A deflection angle of up-to $1.2 \,\textrm{mrad}$ is achieved for an electron beam of $29…
Viscous flow of interacting electrons in two dimensional materials features a bunch of exotic effects. A model resembling the Navier-Stokes equation for classical fluids accounts for them in the so called hydrodynamic regime. We performed a…
This study measures the voltage at which flashover occurs in compressed air for a variety of dielectric materials and lengths in a uniform field for DC voltages up to 100 kV. Statistical time lag is recorded and characterized, displaying a…
The electroweak phase transition is studied at finite temperature. The effective action is given to higher orders, including wave function correction factors and the full $g^4,\lambda^2$ effective potential. An upper bound for the Higgs…
With the new GSI High Current Injector, the beam pulse intensity will be increased by more than two orders of magnitude. The high beam power and the short stopping range at particle energies below 12 MeV/u can destroy accelerator components…
High-performance photonic switches are essential for large-scale optical routing for AI large models and Internet of things. Realizing nonvolatility can further reduce power consumption and expand application scenarios. We propose a…
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…
A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can…