相关论文: Design and cryogenic operation of a hybrid quantum…
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
Quantum technology promises revolutionizing applications in information processing, communications, sensing, and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains a major challenge in many…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…
Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here, we report the low-temperature performance of custom…
On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal…
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as…
Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances.…
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation…
As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the…
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…
The challenges of operating qubits in a cryogenic environment point to a looming bottleneck for large-scale quantum processors, limited by the number of input-output connections. Classical processors solve this problem via multiplexing;…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…