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相关论文: Design and cryogenic operation of a hybrid quantum…

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We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…

介观与纳米尺度物理 · 物理学 2014-10-09 A. C. Betz , S. Barraud , Q. Wilmart , B. Plaçais , X. Jehl , M. Sanquer , M. F. Gonzalez - Zalba

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…

Quantum technology promises revolutionizing applications in information processing, communications, sensing, and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains a major challenge in many…

介观与纳米尺度物理 · 物理学 2018-06-13 Kuan Yen Tan , Matti Partanen , Russell E. Lake , Joonas Govenius , Shumpei Masuda , Mikko Möttönen

Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…

介观与纳米尺度物理 · 物理学 2016-12-16 Hauke Lehmann , Svenja Willing , Sandra Möller , Mirjam Volkmann , Christian Klinke

Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…

介观与纳米尺度物理 · 物理学 2025-07-18 Jonathan Eastoe , Grayson M. Noah , Debargha Dutta , Alessandro Rossi , Jonathan D. Fletcher , Alberto Gomez-Saiz

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…

凝聚态物理 · 物理学 2009-11-07 F. Leonard , J. Tersoff

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…

介观与纳米尺度物理 · 物理学 2015-05-30 B. J. Villis , A. O. Orlov , X. Jehl , G. L. Snider , P. Fay , M. Sanquer

The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here, we report the low-temperature performance of custom…

仪器与探测器 · 物理学 2019-10-04 Yuanyuan Yang , Kushal Das , Alireza Moini , David J. Reilly

On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal…

In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as…

Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances.…

介观与纳米尺度物理 · 物理学 2026-05-18 Alexander Zotov , Conor McGeough , Megan Powell , Alessandro Rossi

Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation…

介观与纳米尺度物理 · 物理学 2023-10-09 G. A. Oakes , L. Peri , L. Cochrane , F. Martins , L. Hutin , B. Bertrand , M. Vinet , A. Gomez Saiz , C. J. B. Ford , C. G. Smith , M. F. Gonzalez-Zalba

As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the…

介观与纳米尺度物理 · 物理学 2023-12-05 C. Rohrbacher , J. Rivard , R. Ritzenthaler , B. Bureau , C. Lupien , H. Mertens , N. Horiguchi , E. Dupont-Ferrier

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

介观与纳米尺度物理 · 物理学 2017-05-09 Nan Ai , Onejae Sul , Milan Begliarbekov , Qiang Song , Kitu Kumar , Daniel S. Choi , Eui-Hyeok Yang , Stefan Strauf

The challenges of operating qubits in a cryogenic environment point to a looming bottleneck for large-scale quantum processors, limited by the number of input-output connections. Classical processors solve this problem via multiplexing;…

介观与纳米尺度物理 · 物理学 2024-10-18 M. A. Wolfe , Thomas McJunkin , Daniel R. Ward , DeAnna Campbell , Mark Friesen , M. A. Eriksson

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

介观与纳米尺度物理 · 物理学 2009-11-11 G. Fiori , G. Iannaccone , G. Klimeck

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit…

介观与纳米尺度物理 · 物理学 2015-12-15 B. Voisin , R. Maurand , S. Barraud , M. Vinet , X. Jehl , M. Sanquer , J. Renard , S. De Franceschi

By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…

材料科学 · 物理学 2017-02-07 Ali Naderi , S. Mohammad Noorbakhsh , Hossein Elahipanah

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…

介观与纳米尺度物理 · 物理学 2009-11-11 M. Hofheinz , X. Jehl , M. Sanquer , G. Molas , M. Vinet , S. Deleonibus
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