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A recent experiment by Ma and collaborators shows that the gap anisotropy in ${\rm Bi}_2 {\rm Sr}_2 {\rm Ca}_1 {\rm Cu}_2 {\rm O}_{8+x}$ is strongly temperature dependent. In particular, the superconducting gap along the $\Gamma - M$…

凝聚态物理 · 物理学 2007-05-23 V. N. Muthukumar , M. Sardar

We study the Coulomb drag effect in double layer electronic systems with local tunneling links. The possibility of tunneling between the layers leads to a pronounced exchange contribution to the transconductance, which is negative and…

凝聚态物理 · 物理学 2009-10-30 Yuval Oreg , Alex Kamenev

We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in…

介观与纳米尺度物理 · 物理学 2016-08-02 H. Reichlova , V. Novak , Y. Kurosaki , M. Yamada , H. Yamamoto , A. Nishide , J. Hayakawa , H. Takahashi , M. Marysko , J. Wunderlich , X. Marti , T. Jungwirth

Thermoelectric effects result from the coupling of charge and heat transport, and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron-hole symmetry,…

超导电性 · 物理学 2016-04-08 S. Kolenda , P. Machon , D. Beckmann , W. Belzig

We present a theory for the pseudo-gap state recently observed at the LaAlO3/SrTiO3 interface, based on superconducting islands embedded in a metallic background. Superconductivity within each island is BCS-like, and the local critical…

超导电性 · 物理学 2015-02-18 D. Bucheli , S. Caprara , M. Grilli

We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques…

介观与纳米尺度物理 · 物理学 2012-09-18 M. R. Nevala , S. Chaudhuri , J. Halkosaari , J. T. Karvonen , I. J. Maasilta

We have performed temperature dependent tunneling spectroscopy on an impurity-free surface area of a LiFeAs single crystal. Our data reveal a highly unusual temperature evolution of superconductivity: at $T_c^*=18$~K a partial…

超导电性 · 物理学 2016-06-16 P. K. Nag , R. Schlegel , D. Baumann , H. -J. Grafe , R. Beck , S. Wurmehl , B. Büchner , C. Hess

A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…

材料科学 · 物理学 2021-08-11 Abhishek Vaidya , Uttam Singisetti

We present radio-frequency thermometry based on a tunnel junction between a superconductor and proximitized normal metal. It allows operation in a wide range of biasing conditions. We demonstrate that the standard finite-bias quasiparticle…

介观与纳米尺度物理 · 物理学 2018-11-28 Bayan Karimi , Jukka P. Pekola

Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using…

介观与纳米尺度物理 · 物理学 2024-01-10 Santu Prasad Jana , Suraina Gupta , Anjan K. Gupta

We consider a mesoscopic four-terminal superconductor/normal metal (S/N) structure in the presence of a temperature gradient along the N wire. A thermoemf arises in this system even in the absence of the thermoelectric quasiparticle current…

超导电性 · 物理学 2009-11-11 A. F. Volkov , V. V. Pavlovskii

We report a study in which the effect of defects/impurities, growth process, off-stoichiometry, and presence of impurity phases on the superconducting properties of noncentrosymmetric CePt3Si is analysed by means of the temperature…

超导电性 · 物理学 2015-05-13 I. Bonalde , R. L. Ribeiro , W. Bramer-Escamilla , C. Rojas , E. Bauer , A. Prokofiev , Y. Haga , T. Yasuda , Y. Onuki

It is well established that the subgap conductivity through a normal-metal-insulator-superconductor (NIS) tunnel junction is strongly affected by interference of electron waves scattered by impurities. In this paper we investigate how the…

介观与纳米尺度物理 · 物理学 2009-11-10 F. Pistolesi , G. Bignon , F. W. J. Hekking

We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope…

介观与纳米尺度物理 · 物理学 2021-06-24 Demetrio Logoteta , Jiang Cao , Marco Pala , Paolo Marconcini , Giuseppe Iannaccone

Recent studies have shown the potential for bipolar thermoelectricity in superconducting tunnel junctions with asymmetric energy gaps. The thermoelectric performance of these systems is significantly impacted by the inverse proximity…

介观与纳米尺度物理 · 物理学 2023-06-14 A. Hijano , F. S. Bergeret , F. Giazotto , A. Braggio

We investigate the temperature dependence of the lower critical field Hc1(T) of a high-quality FeSe single crystal under static magnetic fields H parallel to the c axis. The temperature dependence of the first vortex penetration field has…

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with…

介观与纳米尺度物理 · 物理学 2015-02-27 Jiwon Chang , Chris Hobbs

We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths…

介观与纳米尺度物理 · 物理学 2007-05-23 C. Hoffmann , F. Lefloch , M. Sanquer

The Weyl semimetal trigonal PtBi$_2$ has recently been identified as a promising candidate material for intrinsic topological surface superconductivity emerging from the Fermi arc states of the material with a sizeable superconducting gap.…

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This…