相关论文: Revised diode equation for Ideal Graphene-Semicond…

We review a calculation of the quantum corrections to electrical transport in graphene using the trajectory-based semiclassical method. Compared to conventional metals, for graphene the semiclassical propagator contains an additional…

We study the spin exchange between two electrons localized in separate quantum dots in graphene. The electronic states in the conduction band are coupled indirectly by tunneling to a common continuum of delocalized states in the valence…

In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…

Recent experiments on conduction between a semiconductor and a superconductor have revealed a variety of new mesoscopic phenomena. Here is a review of the present status of this rapidly developing field. A scattering theory is described…

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…

We present results from Monte Carlo simulations of a three dimensional fermionic field theory which can be derived from a model of graphene in which electrons interact via a screened Coulomb potential. For our simulations we employ lattice…

In order to develop a method to extract the parameters of the two inherent Schottky contacts from a single current-voltage (I-V) characteristic curve, the I-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetric…

The transport properties of electrons in graphene $p$-$n$ junction with uniform Kekul\'e lattice distortion have been studied using the tight-binding model and the Landauer-B\"uttiker formalism combined with the nonequilibrium Green's…

An inherent difficulty in studying mesoscopic effects in semiconductor--superconductor hybrid structures is the large Schottky barrier which often forms at the interface. A large technological effort has been invested in in improving the…

Within the Landauer transport formalism we demonstrate that conductance zeroes are possible in bipartite systems at half-filling when leads are contacted to different sublattice sites. In particular, we investigate the application of this…

The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device.…

We simulate the electron transport across the Au(111)-pentacene interface using non-equilibrium Green's functions and density-functional theory (NEGF-DFT), and calculate the bias-dependent electron transmission. We find that the electrical…

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…

We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a…

We present a unified view of electric transport in undoped clean graphene for finite electric field. The weak field results agree with the Kubo approach. For strong electric field, the current increases non-linearly with the electric field…

The single graphene layer is a novel material consisting of a flat monolayer of carbon atoms packed in a two-dimensional honeycomb-lattice, in which the electron dynamics is governed by the Dirac equation. A pseudo-spin phase-space approach…

The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two…

We give a concise account on the derivation of hybrid quantum-classical models for stationary electron transport in graphene, in presence of sharp potential steps of barriers. A quantum region (an asymptotically thin strip around the…

A new type of self-similar potential is used to study a multibarrier system made of graphene. Such potential is based on the traditional middle third Cantor set rule combined with a scaling of the barriers height. The resulting transmission…

We present and analyze two mathematical models for the self consistent quantum transport of electrons in a graphene layer. We treat two situations. First, when the particles can move in all the plane $\RR^2$, the model takes the form of a…