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Atomically thin NbSe2 is a metallic layered transition metal dichalcogenide (TMD) with considerably different crystallographic structure and electronic properties from other TMDs, such as MoS2, MoSe2, WS2 and WSe2. Properties of TMD atomic…

介观与纳米尺度物理 · 物理学 2016-09-05 Rui He , Jeremiah van Baren , Jia-An Yan , Xiaoxiang Xi , Zhipeng Ye , Gaihua Ye , I-Hsi Lu , S. M. Leong , C. H. Lui

The strength of light-matter interaction is of central importance in photonics and optoelectronics. For many widely studied two-dimensional semiconductors, such as MoS2, the optical absorption due to exciton resonances increases with…

介观与纳米尺度物理 · 物理学 2020-04-16 Guowei Zhang , Shenyang Huang , Fanjie Wang , Qiaoxia Xing , Chaoyu Song , Chong Wang , Yuchen Lei , Mingyuan Huang , Hugen Yan

Raman spectroscopy is the prime non-destructive characterization tool for graphene and related layered materials. The shear (C) and layer breathing modes (LBMs) are due to relative motions of the planes, either perpendicular or parallel to…

Hexagonal boron nitride (hBN) has recently gained a strong interest as a strategic component in engineering van der Waals heterostructures built with two dimensional crystals such as graphene. This work reports micro-Raman measurements on…

材料科学 · 物理学 2017-05-04 I Stenger , A Schué , A Boukhicha , B Berini , A Plaçais , A Loiseau , J Barjon

The unique optoelectronic properties of black phosphorus (BP) have triggered great interest in its applications in areas not fulfilled by other layered materials (LMs). However, its poor stability (fast degradation, i.e. <<1 h for…

The crystallographic orientation of anisotropic 2D materials plays a crucial role in their physical properties and device performance. However, standard orientation techniques such as transmission electron microscopy (TEM) or X-ray…

The electronic structure and functionality of 2D materials is highly sensitive to structural morphology, opening the possibility for manipulating material properties, but also making predictable and reproducible functionality challenging.…

介观与纳米尺度物理 · 物理学 2022-10-26 Prakriti P. Joshi , Ruiyu Li , Joseph L. Spellberg , Liangbo Liang , Sarah B. King

Research on black phosphorus (BP) has been experiencing a renaissance over the last few years, after the demonstration that few-layer BP exhibits high carrier mobility and a thickness-dependent band gap. For a long time, bulk BP is also…

材料科学 · 物理学 2017-05-02 Renyan Zhang , John Waters , Andre K. Geim , Irina V. Grigorieva

Cubic boron phosphide BP has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab…

Black phosphorus is a very promising material for telecommunication due to its direct bandgap and strong resonant absorption in near-infrared wavelength range. However, ultrafast nonlinear photonic applications relying on the ultrafast…

In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and 2D Raman imaging. A…

材料科学 · 物理学 2017-08-02 Weijun Luo , Rui Yang , Jialun Liu , Yunlong Zhao , Wenjuan Zhu , Guangrui , Xia

The tunable bandgap from 0.3 eV to 2 eV of black phosphorus (BP) makes it to fill the gap in graphene. When studying the properties of BP more comprehensive, scientists have discovered that many two-dimensional materials, such as tellurene,…

光学 · 物理学 2021-03-01 Ying-Ying Li , Bo Gao , Ying Han , Bing-Kun Chen , Jia-Yu Huo

The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus (BP) is known to exhibit an anomalous behavior. Through optical spectroscopy, here we show that the temperature effect on BP band gap gradually…

The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may…

介观与纳米尺度物理 · 物理学 2020-05-06 M. Grzeszczyk , M. R. Molas , M. Bartoš , K. Nogajewski , M. Potemski , A. Babiński

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using…

介观与纳米尺度物理 · 物理学 2013-05-15 Satyaprakash Sahoo , Anand P. S. Gaur , Majid Ahmadi , Maxime J-F Guinel , Ram S. Katiyar

Black phosphorus (BP) is a layered material with anisotropic properties. We study interfaces formed by a pentacene monolayer adsorbed on monolayer BP, a prototypical system for BP surface passivation. We place the pentacene monolayer along…

材料科学 · 物理学 2022-12-09 Naseem Ud Din , Zhen-Fei Liu

Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…

介观与纳米尺度物理 · 物理学 2017-03-13 Vasudevan Iyer , Peide Ye , Xianfan Xu

Few-layer black phosphorus (FLBP), a recently discovered two-dimensional semiconductor, has attracted substantial attention in the scientific and technical communities due to its great potential in electronic and optoelectronic…

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we…

材料科学 · 物理学 2014-07-08 Jingsi Qiao , Xianghua Kong , Zhi-Xin Hu , Feng Yang , Wei Ji

Phosphorene, the single- or few-layer form of black phosphorus, was recently rediscovered as a twodimensional layered material holding great promise for applications in electronics and optoelectronics. Research into its fundamental…

材料科学 · 物理学 2015-06-19 Liangzhi Kou , Changfeng Chen , Sean C. Smith