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相关论文: Valley depolarization in monolayer WSe2

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The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of…

The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…

强关联电子 · 物理学 2007-05-23 M. W. C. Dharma-wardana , François Perrot

We describe the effects of the crossing of the exciton levels in moire quantum dots in external magnetic field. We demonstrate that the unpolarized light can create significant dynamic valley polarization of interlayer excitons in the…

介观与纳米尺度物理 · 物理学 2021-12-15 D. S. Smirnov

Monolayer transition-metal dichalcogenides (TMDCs) have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. In these…

We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and…

While photons in free space barely interact, matter can mediate interactions between them resulting in optical nonlinearities. Such interactions at the single-quantum level result in an on-site photon repulsion, crucial for photon-based…

介观与纳米尺度物理 · 物理学 2020-06-24 Weijie Li , Xin Lu , Sudipta Dubey , Luka Devenica , Ajit Srivastava

We report an experimental study of the magnetic-field dependence of the optically pumped valley polarization in an epitaxial tungsten diselenide (WSe$_2$) monolayer grown by molecular-beam epitaxy (MBE) on a hexagonal boron nitride (hBN)…

We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton…

介观与纳米尺度物理 · 物理学 2022-07-20 M. A. Semina , M. M. Glazov , C. Robert , L. Lombez , T. Amand , X. Marie

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…

材料科学 · 物理学 2016-02-03 Jisook Hong , Changhoon Lee , Jin-Seong Park , Ji Hoon Shim

We report polarization-resolved resonant reflection spectroscopy of a charge-tunable atomically-thin valley semiconductor hosting tightly bound excitons coupled to a dilute system of fully spin- and valley-polarized holes in the presence of…

介观与纳米尺度物理 · 物理学 2019-09-02 T. Smoleński , O. Cotlet , A. Popert , P. Back , Y. Shimazaki , P. Knüppel , N. Dietler , T. Taniguchi , K. Watanabe , M. Kroner , A. Imamoglu

Many-body interactions in monolayer transition-metal dichalcogenides are strongly affected by their unique band structure. We study these interactions by measuring the energy shift of neutral excitons (bound electron-hole pairs) in gated…

材料科学 · 物理学 2019-02-06 Dinh Van Tuan , Benedikt Scharf , Zefang Wang , Jie Shan , Kin Fai Mak , Igor Zutic , Hanan Dery

Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE…

介观与纳米尺度物理 · 物理学 2022-09-22 Chongyun Jiang , Abdullah Rasmita , Hui Ma , Qinghai Tan , Zumeng Huang , Shen Lai , Sheng Liu , Xue Liu , Qihua Xiong , Wei-bo Gao

Dipolariton is a voltage controlled mixture of direct and indirect excitons in asymmetric double quantum wells coupled by resonant carrier tunneling, and a microcavity photon. We calculate the voltage dependence of the spin-singlet and…

介观与纳米尺度物理 · 物理学 2015-06-23 A. V. Nalitov , D. D. Solnyshkov , N. A. Gippius , G. Malpuech

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides…

材料科学 · 物理学 2018-01-17 Lei Xu , Ming Yang , Lei Shen , Jun Zhou , Tao Zhu , Yuan Ping Feng

The valley degree of freedom and the possibility of spin-valley coupling of solid materials have attracted growing interest, and the relaxation dynamics of spin- and valley-polarized states has become an important focus of recent studies.…

材料科学 · 物理学 2018-09-24 Dongbin Shin , Hosub Jin , Noejung Park

Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum phenomena and potential application in information…

The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has…

We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant…

介观与纳米尺度物理 · 物理学 2015-04-21 M. Tahir , A. Manchon , U. Schwingenschlogl

Monolayer semiconducting transition metal dichalcogenides possess broken inversion symmetry and strong spin-orbit coupling, which leads to unique spin-valley locking effect. In 2H stacked pristine multilayers, the spin-valley locking yields…

介观与纳米尺度物理 · 物理学 2023-06-07 Yinong Zhang , Chengxin Xiao , Dmitry Ovchinnikov , Jiayi Zhu , Xi Wang , Takashi Taniguchi , Kenji Watanabe , Jiaqiang Yan , Wang Yao , Xiaodong Xu

Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…

光学 · 物理学 2023-06-06 Navdeep Rana , Gopal Dixit
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