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相关论文: Valley and spin dynamics in monolayer MoS$_{2}$

200 篇论文

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…

材料科学 · 物理学 2016-02-03 Jisook Hong , Changhoon Lee , Jin-Seong Park , Ji Hoon Shim

We analyze magnetic phases of monolayers of transition metal dichalcogenides that are two-valley materials with electron-electron interactions. The exchange inter-valley scattering makes two-valley systems less stable to the spin…

强关联电子 · 物理学 2019-07-31 Dmitry Miserev , Jelena Klinovaja , Daniel Loss

For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new…

材料科学 · 物理学 2021-01-27 Chen Yang , Zhigang Song , Xiaotian Sun , Jing Lu

Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space.…

介观与纳米尺度物理 · 物理学 2014-09-09 G. Wang , L. Bouet , D. Lagarde , M. Vidal , A. Balocchi , T. Amand , X. Marie , B. Urbaszek

The valley dependent optical selection rules in recently discovered monolayer group-VI transition metal dichalcogenides (TMDs) make possible optical control of valley polarization, a crucial step towards valleytronic applications. However,…

介观与纳米尺度物理 · 物理学 2014-07-31 Rui-Lin Chu , Xiao Li , Sanfeng Wu , Qian Niu , Wang Yao , Xiaodong Xu , Chuanwei Zhang

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($\sigma^+$ or $\sigma^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations.…

介观与纳米尺度物理 · 物理学 2016-05-25 T. Smoleński , M. Goryca , M. Koperski , C. Faugeras , T. Kazimierczuk , K. Nogajewski , P. Kossacki , M. Potemski

We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides TX2, M = Mo, W, X = S, Se, creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field…

材料科学 · 物理学 2015-06-22 Nourdine Zibouche , Pier Philipsen , Agnieszka Kuc , Thomas Heine

We show that the MXene Ta$_2$CS$_2$ provides an excellent platform for hosting multiple coupled degrees of freedom, viz., valley, spin, orbital, and layer. The interplay among these degrees of freedom gives rise to a range of intriguing…

强关联电子 · 物理学 2026-05-05 Kunal Dutta , Anupam Mondal , Sayantika Bhowal , Subhradip Ghosh , Indra Dasgupta

A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…

介观与纳米尺度物理 · 物理学 2023-06-09 Zhou Li , J. P. Carbotte

Monolayer transition metal dichalcogenides (TMDs) offer new opportunities for realizing quantum dots (QDs) in the ultimate two-dimensional (2D) limit. Given the rich control possibilities of electron valley pseudospin discovered in the…

介观与纳米尺度物理 · 物理学 2014-10-24 Gui-Bin Liu , Hongliang Pang , Yugui Yao , Wang Yao

Monolayer transition metal dichalcogenides (TMD) have immense potential for future spintronic and valleytronic applications due to their two-dimensional nature and long spin/valley lifetimes. We investigate the origin of these long-lived…

We study field-controlled spin-valley transport in monolayer MoS$_2$ through a single electrostatic barrier and a uniform off-resonant elliptically polarized irradiation. Starting from the massive Dirac Hamiltonian with intrinsic spin-orbit…

介观与纳米尺度物理 · 物理学 2026-05-21 Kamal Azaidaoui , Hocine Bahlouli , Clarence Cortes , David Laroze , Ahmed Jellal

Valley degrees of freedom in transition-metal dichalcogenides influence thoroughly electron-phonon coupling and its nonequilibrium dynamics. We conducted a first-principles study of the quantum kinetics of chiral phonons following…

介观与纳米尺度物理 · 物理学 2023-08-16 Yiming Pan , Fabio Caruso

Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the…

Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively…

材料科学 · 物理学 2020-10-09 Doried Ghader

The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…

强关联电子 · 物理学 2007-05-23 M. W. C. Dharma-wardana , François Perrot

Using the valley degree of freedom as a carrier of information for storage and processing, valley polarization plays a crucial role. A variety of mechanisms for valley polarization have been proposed, among which the valley-layer coupling…

材料科学 · 物理学 2025-05-29 San-Dong Guo , Liguo Zhang , Xiao-Shu Guo , Gangqiang Zhu

We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant…

介观与纳米尺度物理 · 物理学 2015-04-21 M. Tahir , A. Manchon , U. Schwingenschlogl

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for…

The two-fold valley degeneracy in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) (Mo,W)(S,Se)2 is suitable for "valleytronics", the storage and manupulation of information utilizing the valley degree of…

介观与纳米尺度物理 · 物理学 2015-06-24 Shao-Yu Chen , Changxi Zheng , Michael S. Fuhrer , Jun Yan