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相关论文: H-Si bonding-induced unusual electronic properties…

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We study the electrical modulation of the transport properties of silicene constrictions with different geometrical structures by adopting the tight-binding model and non-equilibrium Green's function method. The band structure and…

介观与纳米尺度物理 · 物理学 2022-06-17 Yawen Guo , Wenqi Jiang , Xinru Wang , Yijing Bai , Fei Wan , Guanqing Wang , Yuan Li

Diverse magnetic and electronic properties of halogen-adsorbed silicene are investigated by the first-principles theoretical framework, including the adatom-diversified geometric structures, the atom-dominated energy bands, the spatial spin…

材料科学 · 物理学 2019-03-27 Duy Khanh Nguyen , Ngoc Thanh Thuy Tran , Yu-Huang Chiu , Ming-Fa Lin

The electronic properties of hydrogenated graphenes are investigated with the first-principles calculations. Geometric structures, energy bands, charge distributions, and density of states (DOS) strongly depend on the different…

材料科学 · 物理学 2015-10-09 Hao-Chun Huang , Shih-Yang Lin , Chung-Lin Wu , Ming-Fa Lin

Analysis of the electron density distribution in clusters composed of hydrogen fluoride, water, and ammonia molecules, especially within the hydrogen-bond domains, reveals the existence of both \sigma- and \pi-binding between molecules. The…

化学物理 · 物理学 2024-05-08 Yulia V. Novakovskaya

The electronic structure of the recently synthesised (3x3) reconstructed silicene on (4x4) Ag(111) is investigated by first-principles calculations. New states emerge due to the strong hybridization between silicene and Ag. Analyzing the…

Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures (vdWHs). Here we investigate the electronic properties of hexagonal boron nitride/silicene (BN/Si) vdWHs using first-principles calculations.…

材料科学 · 物理学 2021-03-09 Ze-Bin Wu , Yu-Yang Zhang , Geng Li , Shixuan Du , Hong-Jun Gao

On the basis of density functional calculations and using Bader's atom in molecule theory, this article presents quantitative microscopic analyses on the bonding properties of amorphous silicon (a-Si) which could reflect in the observable…

材料科学 · 物理学 2019-04-11 Zahra Nourbakhsh , Hadi Akbarzadeh

Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films…

材料科学 · 物理学 2014-06-04 Z. A. Ibrahim , A. I. Shkrebtii , F. Zimmer-de Iuliis , F. Gaspari

The structural and electronic properties of the hydrides of silicene and germanene have been studied using ab initio calculations. The trend for the M-H (M=C, Si, Ge) bond lengths, and corresponding bond energies, is consistent with the…

材料科学 · 物理学 2010-07-14 L. C. Lew Yan Voon , E. Sandberg , R. S. Aga , A. A. Farajian

The electronic and magnetic properties of the new hydride superconductor CaFeAsH, which superconducts up to 47 K when electron-doped with La, and the isovalent alloy system CaFeAsH$_{1-x}$F$_x$ are investigated using density functional…

强关联电子 · 物理学 2016-06-09 Y. N. Huang , D. Y. Liu , L. J. Zou , W. E. Pickett

The HfV$_2$Ga$_4$ compound was recently reported to exhibit unusual bulk superconducting properties, with the possibility of multiband behavior. To gain insight into its properties, we performed ab-initio electronic structure calculations…

超导电性 · 物理学 2018-07-25 P. P. Ferreira , F. B. Santos , A. J. S. Machado , H. M. Petrilli , L. T. F. Eleno

The generalized tight-binding model is developed to investigate the rich and unique electronic properties of AB-bt (bottom-top) bilayer silicene under uniform perpendicular electric and magnetic fields. The first pair of conduction and…

材料科学 · 物理学 2018-03-21 Thi-Nga Do , Po-Hsin Shih , Godfrey Gumbs , Danhong Huang , Chih-Wei Chiu , Ming-Fa Lin

We have calculated electronic and optical properties of Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures by a semiempirical $sp^{3}s^{*}$ tight-binding method. Tight-binding parameters and band bowing of BeSe$_{0.41}$Te$_{0.59}$ are considered…

材料科学 · 物理学 2009-07-01 Titus Sandu W. P. Kirk

Hydrogenation is known to tune superconductivity in a wide range of materials. While its microscopic role has been clarified in phonon-mediated superconductors such as hydrogenated MgB2, LaH10, and H3S, much less is known for hydrogenated…

超导电性 · 物理学 2026-04-29 Lan-Lin Du , Yang Yang , Shiqi Hu , Sheng Meng

The theoretical studies on the electronic and lattice properties of the series of non-centrosymmetric superconductors ThTSi, where T = Co, Ni, Ir, and Pt are presented. The electronic band structure and crystal parameters were optimized…

Band structures of pressure-induced CeNiGe3 and exotic BCS-like YNiGe3 superconductors have been calculated employing the full-potential local-orbital code. Both the local density approximation (LDA) and LDA+U treatment of the…

超导电性 · 物理学 2014-08-01 M. J. Winiarski , M. Samsel-Czekała

The hydrogen-bond (H-bond) network of high-pressure water is investigated by neural-network-based molecular dynamics (MD) simulations with the first-principles accuracy. The static structure factors (SSFs) of water at three densities, i.e.,…

化学物理 · 物理学 2023-08-04 Renxi Liu , Mohan Chen

Hybrid superconductor-semiconductor devices are currently one of the most promising platforms for realizing Majorana zero modes. Their topological properties are controlled by the band alignment of the two materials, as well as the…

介观与纳米尺度物理 · 物理学 2018-08-29 August E. G. Mikkelsen , Panagiotis Kotetes , Peter Krogstrup , Karsten Flensberg

The title compound is investigated by specific heat measurements in the normal and superconducting state supplemented by upper critical field transport, susceptibility and magnetization measurements. From a detailed analysis including also…

We have studied the low-lying electronic structure of a new ThCr$_2$Si$_2$-type superconductor KNi$_2$Se$_2$ with angle-resolved photoemission spectroscopy. Three bands intersect the Fermi level, forming complicated Fermi surface topology,…

超导电性 · 物理学 2015-06-23 Q. Fan , X. P. Shen , M. Y. Li , D. W. Shen , W. Li , X. M. Xie , Q. Q. Ge , Z. R. Ye , S. Y. Tan , X. H. Niu , B. P. Xie , D. L. Feng
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